Autori: Zhang WJ
Naslov | Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays (Article) |
Autori | Jha Shrawan K Jelenkovic Emil V Pejovic Milic M Ristic Goran S Pejovic Momcilo M Tong KY Surya C Bello I Zhang WJ |
Info | MICROELECTRONIC ENGINEERING, (2009), vol. 86 br. 1, str. 37-40 |
Projekat | Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]; Ministry of the Science of the Republic of Serbia [141008B] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |