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Autori: Stojadinovic Ninoslav D

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Naslov Modeling of gamma-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors (Erratum - errors in Authors - vol 38, pg 4699, 1999) (Correction)
Autori Stojadinovic Ninoslav D  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Davidovic Vojkan S 
Info JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, (2001), vol. 40 br. 3A, str. 1530-1530
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Analytical modelling of electrical characteristics in gamma-irradiated power VDMOS transistors (Article)
Autori Manic Ivica Dj  Pavlovic Zoran  Prijic Zoran D  Davidovic Vojkan S  Stojadinovic Ninoslav D 
Info MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 5-6, str. 485-490
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science   Scopus  
Naslov Progress in power semiconductors (Editorial Material)
Autori Charitat G  Benda V  Stojadinovic Ninoslav D 
Info MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 5-6, str. 395-395
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science  
Naslov Radiation effects in low-temperature stressed power VDMOS transistors (Proceedings Paper)
Autori Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, (2000), vol. br. , str. 337-340
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov Papers presented at the 22nd International Conference on Microelectronics (MIEL) 14-17 May 2000, Nis, Yugoslavia (Editorial Material)
Autori Stojadinovic Ninoslav D 
Info MICROELECTRONICS JOURNAL, (2000), vol. 31 br. 11-12, str. 837-837
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science  
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