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Autori: Stojadinovic Ninoslav D

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Naslov Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrode (Article)
Autori Atanassova E  Stojadinovic Ninoslav D  Paskaleva A  Spassov D  Vracar Ljubomir M  Georgieva M 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2008), vol. 23 br. 7, str. -
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Naslov Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs (Article)
Autori Manic Ivica Dj  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Dankovic Danijel M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info IET CIRCUITS DEVICES & SYSTEMS, (2008), vol. 2 br. 2, str. 213-221
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Naslov Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors (Article)
Autori Davidovic Vojkan S  Kouvatsos DN  Stojadinovic Ninoslav D  Voutsas AT 
Info MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 9-11 , Suppl. , str. 1841 -1845
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Naslov Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 9-11 , Suppl. , str. 1400 -1405
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Naslov NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2006), vol. 46 br. 9-11, str. 1828-1833
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Electrical stressing effects in commercial power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D  Manic Ivica Dj  Davidovic Vojkan S  Dankovic Danijel M  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Dimitrijev Sima 
Info IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, (2006), vol. 153 br. 3, str. 281-288
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Naslov Negative bias temperature instability mechanisms in p-channel power VDMOSFETs (Article)
Autori Stojadinovic Ninoslav D  Dankovic Danijel M  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Manic Ivica Dj  Golubovic Snezana M 
Info MICROELECTRONICS RELIABILITY, (2005), vol. 45 br. 9-11, str. 1343-1348
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Effects of electrical stressing in power VDMOSFETS (Article)
Autori Stojadinovic Ninoslav D  Manic Ivica Dj  Davidovic Vojkan S  Dankovic Danijel M  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Dimitrijev Sima 
Info MICROELECTRONICS RELIABILITY, (2005), vol. 45 br. 1, str. 115-122
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Naslov Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors (Article)
Autori Kouvatsos DN  Davidovic Vojkan S  Papaioannou GJ  Stojadinovic Ninoslav D  Michalas L  Exarchos M  Voutsas AT  Goustouridis D 
Info MICROELECTRONICS RELIABILITY, (2004), vol. 44 br. 9-11, str. 1631-1636
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Naslov Stress-induced leakage currents in thin silicon dioxide films (Article)
Autori Pesic Biljana  Vracar Ljubomir M  Stojadinovic Ninoslav D  Pecovska-Djordjevic M  Novkovski N 
Info JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, (2003), vol. 14 br. 10-12, str. 805-807
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