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Autori: Sasic Rajko M

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Naslov Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field (Article)
Autori Loncar Boris B  Osmokrovic Predrag V  Stankovic Srboljub J  Sasic Rajko M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2006), vol. 8 br. 2, str. 863-866
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov New analytical HFET I-V characteristics model (Article)
Autori Sasic Rajko M  Lukic Petar M  Ramovic Rifat M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2006), vol. 8 br. 1, str. 324-328
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling and optimization of reliability of one redundant computer network (Proceedings Paper)
Autori Lukic Petar M  Ramovic Rifat M  Sasic Rajko M 
Info Eurocon 2005: The International Conference on Computer as a Tool, Vol 1 and 2 , Proceedings, (2005), vol. br. , str. 1762-1765
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Influence of the electrode parameters on pulse shape characteristic of gas-filled surge arresters at small pressure and inter-electrode gap values (Article)
Autori Osmokrovic Predrag V  Loncar Boris B  Sasic Rajko M 
Info IEEE TRANSACTIONS ON PLASMA SCIENCE, (2005), vol. 33 br. 5, str. 1729-1735
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov HEMT carrier mobility analytical model (Article)
Autori Lukic Petar M  Ramovic Rifat M  Sasic Rajko M 
Info CURRENT RESEARCH IN ADVANCED MATERIALS AND PROCESSES, (2005), vol. 494 br. , str. 43-48
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Analytical model of electric field in heterojunction region of HFET structure (Article)
Autori Lukic Petar M  Ramovic Rifat M  Sasic Rajko M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2005), vol. 7 br. 3, str. 1611-1617
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Evaluating of MODFET gate capacitance and current gain cutoff frequency (Proceedings Paper)
Autori Sasic Rajko M  Cevizovic Dalibor N  Galovic Slobodanka P  Ramovic Rifat M 
Info 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, (2004), vol. br. , str. 311-314
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel (Article)
Autori Sasic Rajko M  Cevizovic Dalibor N  Ramovic Rifat M 
Info CONTEMPORARY STUDIES IN ADVANCED MATERIALS AND PROCESSES, (2003), vol. 413 br. , str. 39-44
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Sheet density of electrons in Spacer layer of AlGaN/GaN MODFET: Calculating and analysing (Proceedings Paper)
Autori Cevizovic Dalibor N  Sasic Rajko M  Ramovic Rifat M 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 475-478
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov A new approach to the velocity field investigation in case of the entry flow in curved pipes with circular cross section (Article)
Autori Sasic Rajko M  Sasic S 
Info ACTA MECHANICA, (2000), vol. 140 br. 1-2, str. 103-117
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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