Autori: Ristic Goran S
| Naslov | Defect Behaviors During High Electric Field Stress of p-Channel Power MOSFETs (Article) |
| Autori | Ristic Goran S |
| Info | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2012), vol. 12 br. 1, str. 94-100 |
| Projekat | Ministry of Education and Science of the Republic of Serbia[III43011] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | A system for gas electrical breakdown time delay measurements based on a microcontroller (Article) |
| Autori | Todorovic Miomir Vasovic Nikola D Ristic Goran S |
| Info | MEASUREMENT SCIENCE & TECHNOLOGY, (2012), vol. 23 br. 1, str. - |
| Projekat | Ministry of Education and Science of the Republic of Serbia[43011]; European Commission[207 122 RADDOS] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si) (Article) |
| Autori | Ristic Goran S Vasovic Nikola D Kovacevic Milojko S Jaksic Aleksandar B |
| Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2011), vol. 269 br. 23, str. 2703-2708 |
| Projekat | Ministry of Education and Science of the Republic of Serbia[11143011]; European Commission[207 122 RADDOS] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 degrees C (Article) |
| Autori | Ristic Goran S Vasovic Nikola D |
| Info | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2011), vol. 26 br. 8, str. - |
| Projekat | Ministry of Science and Technology Development of the Republic of Serbia[43011] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation (Article) |
| Autori | Jelenkovic Emil V Ristic Goran S Pejovic Milic M Jevtic Milan M Jha Shrawan K Videnovic-Misic Mirjana S Pejovic Momcilo M Tong KY |
| Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2011), vol. 44 br. 1, str. - |
| Projekat | Hong Kong Polytechnic University ; Ministry of Science and Technology Development of Republic of Serbia [141008B] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Thermal and UV annealing of irradiated pMOS dosimetric transistors (Article) |
| Autori | Ristic Goran S |
| Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2009), vol. 42 br. 13, str. - |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays (Article) |
| Autori | Jha Shrawan K Jelenkovic Emil V Pejovic Milic M Ristic Goran S Pejovic Momcilo M Tong KY Surya C Bello I Zhang WJ |
| Info | MICROELECTRONIC ENGINEERING, (2009), vol. 86 br. 1, str. 37-40 |
| Projekat | Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]; Ministry of the Science of the Republic of Serbia [141008B] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve (Article) |
| Autori | Nesic Nikola T Ristic Goran S Karamarkovic Jugoslav P Pejovic Momcilo M |
| Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 22, str. - |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors (Review) |
| Autori | Ristic Goran S |
| Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2008), vol. 41 br. 2, str. - |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Analysis of neutral active particle loss in afterglow in krypton at 2.6 mbar pressure (Article) |
| Autori | Pejovic Momcilo M Karamarkovic Jugoslav P Ristic Goran S Pejovic Milic M |
| Info | PHYSICS OF PLASMAS, (2008), vol. 15 br. 1 , Suppl. , str. - |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
