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Autori: Ramovic Rifat M

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Naslov Surface density analytical model of two-dimensional electron gas in HEMT structures (Article)
Autori Ramovic Rifat M  Lukic Petar M 
Info PROGRESS IN ADVANCED MATERIALS AND PROCESSES, (2004), vol. 453-454 br. , str. 27-32
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel (Article)
Autori Sasic Rajko M  Cevizovic Dalibor N  Ramovic Rifat M 
Info CONTEMPORARY STUDIES IN ADVANCED MATERIALS AND PROCESSES, (2003), vol. 413 br. , str. 39-44
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator (Article)
Autori Jevtic Milan M  Hadzi-Vukovic Jovan M  Ramovic Rifat M 
Info MICROELECTRONICS JOURNAL, (2002), vol. 33 br. 11, str. 955-960
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science   Scopus  
Naslov Sheet density of electrons in Spacer layer of AlGaN/GaN MODFET: Calculating and analysing (Proceedings Paper)
Autori Cevizovic Dalibor N  Sasic Rajko M  Ramovic Rifat M 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 475-478
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov A novel analytical model of a SiC MOSFET (Proceedings Paper)
Autori Ramovic Rifat M  Jevtic Milan M  Hadzi-Vukovic Jovan M  Randjelovic Danijela V 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 447-450
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov Parallel thermal analysis of hybrid and SMT modules using 2D and 3D models (Proceedings Paper)
Autori Radojcic Branka M  Ramovic Rifat M  Aleksic Obrad S 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 365-368
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
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