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Autori: Pesic Tatjana V

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Naslov Dynamic MAGFET model for sensor simulations (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  Pantic Dragan S 
Info IET CIRCUITS DEVICES & SYSTEMS, (2007), vol. 1 br. 4 , Suppl. , str. 270 -274
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov All injection level power PiN diode model including temperature dependence (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  Igic Petar 
Info SOLID-STATE ELECTRONICS, (2007), vol. 51 br. 5 , Suppl. , str. 719 -725
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modelling of strained-Si/SiGe NMOS transistors including DC self-heating (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  O'Neill AG 
Info SOLID-STATE ELECTRONICS, (2006), vol. 50 br. 3, str. 496-499
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line (Article)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, (2005), vol. 24 br. 10, str. 1550-1561
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V 
Info SOLID-STATE ELECTRONICS, (2005), vol. 49 br. 7, str. 1086-1089
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors (Article)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 9, str. 713-718
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science   Scopus  
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