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Autori: Pesic Tatjana V

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Naslov Dynamic MAGFET model for sensor simulations (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  Pantic Dragan S 
Info IET CIRCUITS DEVICES & SYSTEMS, (2007), vol. 1 br. 4 , Suppl. , str. 270 -274
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov All injection level power PiN diode model including temperature dependence (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  Igic Petar 
Info SOLID-STATE ELECTRONICS, (2007), vol. 51 br. 5 , Suppl. , str. 719 -725
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modelling of strained-Si/SiGe NMOS transistors including DC self-heating (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  O'Neill AG 
Info SOLID-STATE ELECTRONICS, (2006), vol. 50 br. 3, str. 496-499
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line (Article)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, (2005), vol. 24 br. 10, str. 1550-1561
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V 
Info SOLID-STATE ELECTRONICS, (2005), vol. 49 br. 7, str. 1086-1089
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis (Proceedings Paper)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, (2004), vol. br. , str. 261-264
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov 3D simulation of cross-shaped hall sensor and its equivalent circuit model (Proceedings Paper)
Autori Jovanovic Elva  Pesic Tatjana V  Pantic Dragan S 
Info 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, (2004), vol. br. , str. 235-238
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation (Proceedings Paper)
Autori Pesic Tatjana V  Jankovic Nebojsa D  Huebers Heinz-Wilhelm 
Info ASDAM '02, CONFERENCE PROCEEDINGS, (2002), vol. br. , str. 187-190
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov 1D physically based non-quasi-static analog behavioral BJT model for SPICE (Proceedings Paper)
Autori Jankovic Nebojsa D  Pesic Tatjana V  Huebers Heinz-Wilhelm 
Info 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 463-468
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors (Article)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 9, str. 713-718
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science   Scopus  
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