Autori: Odalovic Mihajlo T
| Naslov | A Stochastic Model of Gamma-Ray Induced Oxide Charge Distribution and Threshold Voltage Shift of Mos Transistors (Article) |
| Autori | Kevkic Tijana S Odalovic Mihajlo T Petkovic Dragan M |
| Info | NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2012), vol. 27 br. 1, str. 33-39 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
