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Autori: Mitrovic Nikola I

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Naslov Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Davidovic Vojkan S  Golubovic Snezana M  Veljkovic Sandra  Mitrovic Nikola I  Djoric-Veljkovic Snezana M 
Info MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. -
Projekat Ministry of Education, Science and Technological Development, Serbia [OI-171026, TR-32026]; [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method (Article)
Autori Mitrovic Nikola I  Dankovic Danijel M  Randjelovic Branislav M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2020), vol. 50 br. 3, str. 205-214
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia; Serbian Academy of Science and Arts
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling of NBTS Effects in P-Channel Power VDMOSFETs (Article)
Autori Dankovic Danijel M  Mitrovic Nikola I  Prijic Zoran D  Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2020), vol. 20 br. 1, str. 204-213
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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