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Autori: Mitrovic Nikola I

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Naslov Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress (Article)
Autori Veljkovic Sandra  Mitrovic Nikola I  Davidovic Vojkan S  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Paskaleva Albena  Spassov Dencho  Stankovic Srboljub J  Andjelkovic Marko Lj  Prijic Zoran D  Manic Ivica Dj  Prijic Aneta P  Ristic Goran S  Dankovic Danijel M 
Info JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, (2022), vol. 31 br. 18, str. -
Projekat European Union's Horizon 2020 research and innovation program [857558-ELICSIR]; Ministry of Education, Science and Technology Development of the Republic of Serbia [451-03-9/2021-14/200102]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Davidovic Vojkan S  Golubovic Snezana M  Veljkovic Sandra  Mitrovic Nikola I  Djoric-Veljkovic Snezana M 
Info MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. -
Projekat Ministry of Education, Science and Technological Development, Serbia [OI-171026, TR-32026]; [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Practical Methods for Teaching of Solar Cell Characterization (Proceedings Paper)
Autori Mitrovic Nikola I  Stojanovic Milan D 
Info 2020 55TH INTERNATIONAL SCIENTIFIC CONFERENCE ON INFORMATION, COMMUNICATION AND ENERGY SYSTEMS AND TECHNOLOGIES (IEEE ICEST 2020), (2020), vol. br. , str. 85-88
Projekat Ministry of Education, Science and Technological Developmentof the Republic of Serbia
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method (Article)
Autori Mitrovic Nikola I  Dankovic Danijel M  Randjelovic Branislav M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2020), vol. 50 br. 3, str. 205-214
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia; Serbian Academy of Science and Arts
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling of NBTS Effects in P-Channel Power VDMOSFETs (Article)
Autori Dankovic Danijel M  Mitrovic Nikola I  Prijic Zoran D  Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2020), vol. 20 br. 1, str. 204-213
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modelling of Delta V-T in NBT Stressed P-Channel Power VDMOSFETs (Proceedings Paper)
Autori Mitrovic Nikola I  Dankovic Danijel M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info 2019 IEEE 31ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL 2019), (2019), vol. br. , str. 177-180
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts (SASA) [F-148]
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
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