Autori: Manic Ivica Dj
| Naslov | Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress (Article) |
| Autori | Veljkovic Sandra Mitrovic Nikola I Davidovic Vojkan S Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stankovic Srboljub J Andjelkovic Marko Lj Prijic Zoran D Manic Ivica Dj Prijic Aneta P Ristic Goran S Dankovic Danijel M |
| Info | JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, (2022), vol. 31 br. 18, str. - |
| Projekat | European Union's Horizon 2020 research and innovation program [857558-ELICSIR]; Ministry of Education, Science and Technology Development of the Republic of Serbia [451-03-9/2021-14/200102] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | NBTI and irradiation related degradation mechanisms in power VDMOS transistors (Article; Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stankovic Srboljub J Prijic Aneta P Prijic Zoran D Manic Ivica Dj Dankovic Danijel M |
| Info | MICROELECTRONICS RELIABILITY, (2018), vol. 88-90 br. , str. 135-141 |
| Projekat | Ministry of Education, Science and Technological Development of Republic of Serbia [OI-171026]; Serbian Academy of Science and Arts (SASA) [F-148] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | A review of pulsed NBTI in P-channel power VDMOSFETs (Review) |
| Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Prijic Zoran D Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stojadinovic Ninoslav D |
| Info | MICROELECTRONICS RELIABILITY, (2018), vol. 82 br. , str. 28-36 |
| Projekat | Ministry of Science of the Republic of Serbia [OI-171026, TR-32026]; SASA [F-148] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article) |
| Autori | Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Prijic Aneta P Stojadinovic Ninoslav D |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. - |
| Projekat | Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs (Article) |
| Autori | Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Marjanovic Milos B Ilic Aleksandar Prijic Zoran D Stojadinovic Ninoslav D |
| Info | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2016), vol. 16 br. 4, str. 522-531 |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis, Serbia |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article) |
| Autori | Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D |
| Info | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275 |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article) |
| Autori | Dankovic Danijel M Stojadinovic Ninoslav D Prijic Zoran D Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Djoric-Veljkovic Snezana M Golubovic Snezana M |
| Info | CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. - |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation (Article) |
| Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Djoric-Veljkovic Snezana M Davidovic Vojkan S Stojadinovic Ninoslav D Prijic Zoran D Golubovic Snezana M |
| Info | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2015), vol. 30 br. 10, str. - |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors (Article) |
| Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2015), vol. 54 br. 6, str. - |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Measurement of NBTI Degradation in p-channel Power VDMOSFETs (Article) |
| Autori | Manic Ivica Dj Dankovic Danijel M Prijic Aneta P Prijic Zoran D Stojadinovic Ninoslav D |
| Info | INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2014), vol. 44 br. 4, str. 280-287 |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis, Serbia |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
