Autori: Manic Ivica Dj
Naslov | Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 9-11, str. 1465-1468 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
Naslov | Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 4-5, str. 669-677 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Effects of positive gate bias stress on radiation response in power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 723-726 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
Naslov | Spontaneous recovery of positive gate bias stressed power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 717-721 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
Naslov | Radiation hardening of power MOSFETs using electrical stress (Article) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
Info | ELECTRONICS LETTERS, (2002), vol. 38 br. 9, str. 431-432 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Gamma-irradiation effects in power MOSFETs for application in communication satellites (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Manic Ivica Dj Golubovic Snezana M |
Info | TELSIKS 2001, VOL 1 & 2, PROCEEDINGS, (2001), vol. br. , str. 395-400 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
Info | MICROELECTRONICS RELIABILITY, (2001), vol. 41 br. 9-10, str. 1373-1378 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
Info | PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, (2001), vol. br. , str. 243-248 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
Naslov | Analytical modelling of electrical characteristics in gamma-irradiated power VDMOS transistors (Article) |
Autori | Manic Ivica Dj Pavlovic Zoran Prijic Zoran D Davidovic Vojkan S Stojadinovic Ninoslav D |
Info | MICROELECTRONICS JOURNAL, (2001), vol. 32 br. 5-6, str. 485-490 |
Ispravka | ISI/Web of Science Članak Citati: ISI/Web of Science Scopus |