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Autori: Manic Ivica Dj

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Naslov Hf-doped Ta2O5 stacks under constant voltage stress (Article)
Autori Manic Ivica Dj  Atanassova E  Stojadinovic Ninoslav D  Spassov Dencho  Paskaleva Albena 
Info MICROELECTRONIC ENGINEERING, (2011), vol. 88 br. 3, str. 305-313
Projekat Bulgarian National Science Foundation [DTK 02/50]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress (Proceedings Paper)
Autori Stojadinovic Ninoslav D  Dankovic Danijel M  Manic Ivica Dj  Prijic Aneta P  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Prijic Zoran D 
Info MICROELECTRONICS RELIABILITY, (2010), vol. 50 br. 9-11, str. 1278-1282
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs (Proceedings Paper)
Autori Manic Ivica Dj  Dankovic Danijel M  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2009), vol. 49 br. 9-11, str. 1003-1007
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Negative bias temperature instability in n-channel power VDMOSFETs (Proceedings Paper)
Autori Dankovic Danijel M  Manic Ivica Dj  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2008), vol. 48 br. 8-9, str. 1313-1317
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors (Article)
Autori Davidovic Vojkan S  Stojadinovic Ninoslav D  Dankovic Danijel M  Golubovic Snezana M  Manic Ivica Dj  Djoric-Veljkovic Snezana M  Dimitrijev Sima 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2008), vol. 47 br. 8, str. 6272-6276
Projekat Ministry of Science of the Republic of Serbia
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs (Proceedings Paper)
Autori Dankovic Danijel M  Manic Ivica Dj  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info 2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2008), vol. br. , str. 599-602
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs (Article)
Autori Manic Ivica Dj  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Dankovic Danijel M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info IET CIRCUITS DEVICES & SYSTEMS, (2008), vol. 2 br. 2, str. 213-221
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs (Proceedings Paper)
Autori Stojadinovic Ninoslav D  Dankovic Danijel M  Manic Ivica Dj  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M 
Info TELSIKS 2007: 8TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, VOLS 1 AND 2, (2007), vol. br. , str. 275-282
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 9-11 , Suppl. , str. 1400 -1405
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2006), vol. 46 br. 9-11, str. 1828-1833
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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