Autori: Lukic Petar M
| Naslov | The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ostojic Stanko M Alkoash Abedalkhem |
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2010), vol. 12 br. 5, str. 1161-1164 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Surface carriers' concentration dynamics caused by a small alternating applied voltage (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ostojic Stanko M Ramovic Rifat M |
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2008), vol. 10 br. 12, str. 3430-3435 |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Analytical model of a Si TFT with cylindrical source and drain (Proceedings Paper) |
| Autori | Ramovic Rifat M Lukic Petar M Sasic Rajko M Ostojic Stanko M |
| Info | 2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2008), vol. br. , str. 193-196 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Conduction mechanism based model of organic field effect transistor structure (Proceedings Paper) |
| Autori | Sasic Rajko M Lukic Petar M |
| Info | RESEARCH TRENDS IN CONTEMPORARY MATERIALS SCIENCE, (2007), vol. 555 br. , str. 125-+ |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa |
| Naslov | Modeling and investigation of SiGe based MOSFET structure transport characteristics (Proceedings Paper) |
| Autori | Lukic Petar M Ramovic Rifat M Sasic Rajko M |
| Info | RESEARCH TRENDS IN CONTEMPORARY MATERIALS SCIENCE, (2007), vol. 555 br. , str. 101-+ |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa |
| Naslov | Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ramovic Rifat M Ostojic Stanko M |
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2007), vol. 9 br. 9 , Suppl. , str. 2703 -2708 |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Conduction mechanism based model of organic field effect transistor structure (Proceedings Paper) |
| Autori | Sasic Rajko M Lukic Petar M |
| Info | Research Trends in Contemporary Materials Science, (2007), vol. 555 br. , str. 125-130 |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Modeling and investigation of SiGe based MOSFET structure transport characteristics (Proceedings Paper) |
| Autori | Lukic Petar M Ramovic Rifat M Sasic Rajko M |
| Info | Research Trends in Contemporary Materials Science, (2007), vol. 555 br. , str. 101-106 |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Novel approach to the investigation of carriers' concentration in various semiconductor structures (Article) |
| Autori | Ramovic Rifat M Sasic Rajko M Lukic Petar M |
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2006), vol. 8 br. 4, str. 1418-1423 |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | A new threshold voltage analytical model of strained Si/SiGe MOSFET (Proceedings Paper) |
| Autori | Lukic Petar M Ramovic Rifat M Sasic Rajko M |
| Info | 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 505-508 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
