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Autori: Lukic Petar M

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Naslov The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs (Article)
Autori Sasic Rajko M  Lukic Petar M  Ostojic Stanko M  Alkoash Abedalkhem 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2010), vol. 12 br. 5, str. 1161-1164
Projekat Serbian Ministry of Science and Technological Development
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Surface carriers' concentration dynamics caused by a small alternating applied voltage (Article)
Autori Sasic Rajko M  Lukic Petar M  Ostojic Stanko M  Ramovic Rifat M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2008), vol. 10 br. 12, str. 3430-3435
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Analytical model of a Si TFT with cylindrical source and drain (Proceedings Paper)
Autori Ramovic Rifat M  Lukic Petar M  Sasic Rajko M  Ostojic Stanko M 
Info 2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2008), vol. br. , str. 193-196
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics (Article)
Autori Sasic Rajko M  Lukic Petar M  Ramovic Rifat M  Ostojic Stanko M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2007), vol. 9 br. 9 , Suppl. , str. 2703 -2708
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Conduction mechanism based model of organic field effect transistor structure (Proceedings Paper)
Autori Sasic Rajko M  Lukic Petar M 
Info Research Trends in Contemporary Materials Science, (2007), vol. 555 br. , str. 125-130
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Modeling and investigation of SiGe based MOSFET structure transport characteristics (Proceedings Paper)
Autori Lukic Petar M  Ramovic Rifat M  Sasic Rajko M 
Info Research Trends in Contemporary Materials Science, (2007), vol. 555 br. , str. 101-106
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Novel approach to the investigation of carriers' concentration in various semiconductor structures (Article)
Autori Ramovic Rifat M  Sasic Rajko M  Lukic Petar M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2006), vol. 8 br. 4, str. 1418-1423
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A new threshold voltage analytical model of strained Si/SiGe MOSFET (Proceedings Paper)
Autori Lukic Petar M  Ramovic Rifat M  Sasic Rajko M 
Info 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 505-508
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov New analytical HFET I-V characteristics model (Article)
Autori Sasic Rajko M  Lukic Petar M  Ramovic Rifat M 
Info JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2006), vol. 8 br. 1, str. 324-328
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling and optimization of reliability of one redundant computer network (Proceedings Paper)
Autori Lukic Petar M  Ramovic Rifat M  Sasic Rajko M 
Info Eurocon 2005: The International Conference on Computer as a Tool, Vol 1 and 2 , Proceedings, (2005), vol. br. , str. 1762-1765
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
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