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Naslov Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon (Article)
Autori Balakshin Yu V  Kozhemiako AV  Petrovic Srdjan M  Eric Marko V  Shemukhin AA  Chernysh VS 
Info SEMICONDUCTORS, (2019), vol. 53 br. 8, str. 1011-1017
Projekat Russian Foundation for Basic Research [18-32-00833mol_a]; Ministry of Education, Science, and Technological Development of Serbia [III 45006]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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