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Naslov Positive bias temperature instability of irradiated n-channel thin film transistors (Article)
Autori Jelenkovic Emil V  Kovacevic Milan S  Stupar Dragan Z  Jha Shrawan K  Bajic Jovan S  Tong KY 
Info THIN SOLID FILMS, (2014), vol. 556 br. , str. 535-538
Projekat Research Grants Council of the Hong Kong Special Administrative Region, China [PolyU 5316/09E]; Research Committee of The Hong Kong Polytechnic University; projects of the Ministry of Education, Science and Technological Development of Republic of Serbia
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress (Article)
Autori Jelenkovic Emil V  Kovcevic Milojko  Jha Shrawan K  Tong KY  Nikezic Dragoslav R 
Info MICROELECTRONIC ENGINEERING, (2013), vol. 104 br. , str. 90-94
Projekat Hong Kong Polytechnic University; Ministry of Science and Technology Development of Republic of Serbia [04311]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation (Article)
Autori Jelenkovic Emil V  Ristic Goran S  Pejovic Milic M  Jevtic Milan M  Jha Shrawan K  Videnovic-Misic Mirjana S  Pejovic Momcilo M  Tong KY 
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2011), vol. 44 br. 1, str. -
Projekat Hong Kong Polytechnic University ; Ministry of Science and Technology Development of Republic of Serbia [141008B]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays (Article)
Autori Jha Shrawan K  Jelenkovic Emil V  Pejovic Milic M  Ristic Goran S  Pejovic Momcilo M  Tong KY  Surya C  Bello I  Zhang WJ 
Info MICROELECTRONIC ENGINEERING, (2009), vol. 86 br. 1, str. 37-40
Projekat Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]; Ministry of the Science of the Republic of Serbia [141008B]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering (Article)
Autori Jelenkovic Emil V  Jevtic Milan M  Tong KY  Pang GKH  Cheung WY  Jha Shrawan K 
Info MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, (2007), vol. 10 br. 4-5, str. 143-149
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
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