Autori: Jha Shrawan K
Naslov | Positive bias temperature instability of irradiated n-channel thin film transistors (Article) |
Autori | Jelenkovic Emil V Kovacevic Milan S Stupar Dragan Z Jha Shrawan K Bajic Jovan S Tong KY |
Info | THIN SOLID FILMS, (2014), vol. 556 br. , str. 535-538 |
Projekat | Research Grants Council of the Hong Kong Special Administrative Region, China [PolyU 5316/09E]; Research Committee of The Hong Kong Polytechnic University; projects of the Ministry of Education, Science and Technological Development of Republic of Serbia |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress (Article) |
Autori | Jelenkovic Emil V Kovcevic Milojko Jha Shrawan K Tong KY Nikezic Dragoslav R |
Info | MICROELECTRONIC ENGINEERING, (2013), vol. 104 br. , str. 90-94 |
Projekat | Hong Kong Polytechnic University; Ministry of Science and Technology Development of Republic of Serbia [04311] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation (Article) |
Autori | Jelenkovic Emil V Ristic Goran S Pejovic Milic M Jevtic Milan M Jha Shrawan K Videnovic-Misic Mirjana S Pejovic Momcilo M Tong KY |
Info | JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2011), vol. 44 br. 1, str. - |
Projekat | Hong Kong Polytechnic University ; Ministry of Science and Technology Development of Republic of Serbia [141008B] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays (Article) |
Autori | Jha Shrawan K Jelenkovic Emil V Pejovic Milic M Ristic Goran S Pejovic Momcilo M Tong KY Surya C Bello I Zhang WJ |
Info | MICROELECTRONIC ENGINEERING, (2009), vol. 86 br. 1, str. 37-40 |
Projekat | Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]; Ministry of the Science of the Republic of Serbia [141008B] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering (Article) |
Autori | Jelenkovic Emil V Jevtic Milan M Tong KY Pang GKH Cheung WY Jha Shrawan K |
Info | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, (2007), vol. 10 br. 4-5, str. 143-149 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |