Autori: Jankovic Nebojsa D
Naslov | A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT (Article) |
Autori | Jankovic Nebojsa D Faramehr Soroush Igic Petar |
Info | JOURNAL OF COMPUTATIONAL ELECTRONICS, (2022), vol. 21 br. 1, str. 191-196 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing (Article) |
Autori | Faramehr Soroush Poluri Nagaditya Igic Petar Jankovic Nebojsa D De Souza Maria Merlyne |
Info | IEEE TRANSACTIONS ON ELECTRON DEVICES, (2019), vol. 66 br. 10, str. 4367-4372 |
Projekat | EPSRCEngineering & Physical Sciences Research Council (EPSRC) [CN/FEAS17/ITSIA] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Analysis of GaN MagHEMTs (Article) |
Autori | Faramehr Soroush Jankovic Nebojsa D Igic Petar |
Info | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2018), vol. 33 br. 9, str. - |
Projekat | FLEXIS, the European Regional Development Funds (ERDF) |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology (Article) |
Autori | Igic Petar Jankovic Nebojsa D Evans Jon Elwin Matthew Batcup Stephen Faramehr Soroush |
Info | IEEE ELECTRON DEVICE LETTERS, (2018), vol. 39 br. 5, str. 746-748 |
Projekat | EPSRC RC U.K. through EPSRC Challenge Network in APE [CN/FEAS17/ITSIA] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology (Article) |
Autori | Jankovic Nebojsa D Kryvchenkova Olga Batcup Steve Igic Petar |
Info | IEEE ELECTRON DEVICE LETTERS, (2017), vol. 38 br. 6, str. 810-813 |
Projekat | EPSRC RC UK [RGS 122292/118084] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs (Article) |
Autori | Jankovic Nebojsa D Young Chadwin D |
Info | MICROELECTRONICS RELIABILITY, (2016), vol. 59 br. , str. 26-29 |
Projekat | Ministry of Education and Science Republic of Serbia [OI171026] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs (Article) |
Autori | Jankovic Nebojsa D Pesic-Brdjanin Tatjana |
Info | JOURNAL OF COMPUTATIONAL ELECTRONICS, (2015), vol. 14 br. 3, str. 844-851 |
Projekat | Ministry of Education and Science Republic of Serbia [OI171026] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
Naslov | Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco (Article) |
Autori | Jankovic Nebojsa D |
Info | MICROELECTRONICS RELIABILITY, (2012), vol. 52 br. 11, str. 2537-2541 |
Projekat | Ministry of Science of the Republic of Serbia [171026] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate (Article) |
Autori | Jankovic Nebojsa D Pantic Dragan S Batcup Steve Igic Petar |
Info | APPLIED PHYSICS LETTERS, (2012), vol. 100 br. 26, str. - |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | V-th compensated AMOLED pixel employing dual-gate TFT driver (Article) |
Autori | Jankovic Nebojsa D Brajovic V |
Info | ELECTRONICS LETTERS, (2011), vol. 47 br. 7, str. 456-U122 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |