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Autori: Jankovic Nebojsa D

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Naslov A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT (Article)
Autori Jankovic Nebojsa D  Faramehr Soroush  Igic Petar 
Info JOURNAL OF COMPUTATIONAL ELECTRONICS, (2022), vol. 21 br. 1, str. 191-196
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing (Article)
Autori Faramehr Soroush  Poluri Nagaditya  Igic Petar  Jankovic Nebojsa D  De Souza Maria Merlyne 
Info IEEE TRANSACTIONS ON ELECTRON DEVICES, (2019), vol. 66 br. 10, str. 4367-4372
Projekat EPSRCEngineering & Physical Sciences Research Council (EPSRC) [CN/FEAS17/ITSIA]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Analysis of GaN MagHEMTs (Article)
Autori Faramehr Soroush  Jankovic Nebojsa D  Igic Petar 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2018), vol. 33 br. 9, str. -
Projekat FLEXIS, the European Regional Development Funds (ERDF)
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology (Article)
Autori Igic Petar  Jankovic Nebojsa D  Evans Jon  Elwin Matthew  Batcup Stephen  Faramehr Soroush 
Info IEEE ELECTRON DEVICE LETTERS, (2018), vol. 39 br. 5, str. 746-748
Projekat EPSRC RC U.K. through EPSRC Challenge Network in APE [CN/FEAS17/ITSIA]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology (Article)
Autori Jankovic Nebojsa D  Kryvchenkova Olga  Batcup Steve  Igic Petar 
Info IEEE ELECTRON DEVICE LETTERS, (2017), vol. 38 br. 6, str. 810-813
Projekat EPSRC RC UK [RGS 122292/118084]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs (Article)
Autori Jankovic Nebojsa D  Young Chadwin D 
Info MICROELECTRONICS RELIABILITY, (2016), vol. 59 br. , str. 26-29
Projekat Ministry of Education and Science Republic of Serbia [OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs (Article)
Autori Jankovic Nebojsa D  Pesic-Brdjanin Tatjana 
Info JOURNAL OF COMPUTATIONAL ELECTRONICS, (2015), vol. 14 br. 3, str. 844-851
Projekat Ministry of Education and Science Republic of Serbia [OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco (Article)
Autori Jankovic Nebojsa D 
Info MICROELECTRONICS RELIABILITY, (2012), vol. 52 br. 11, str. 2537-2541
Projekat Ministry of Science of the Republic of Serbia [171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate (Article)
Autori Jankovic Nebojsa D  Pantic Dragan S  Batcup Steve  Igic Petar 
Info APPLIED PHYSICS LETTERS, (2012), vol. 100 br. 26, str. -
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov V-th compensated AMOLED pixel employing dual-gate TFT driver (Article)
Autori Jankovic Nebojsa D  Brajovic V 
Info ELECTRONICS LETTERS, (2011), vol. 47 br. 7, str. 456-U122
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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