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Autori: Jankovic Nebojsa D

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Naslov An advance physics-based sub-circuit model of IGBT (Proceedings Paper)
Autori Jankovic Nebojsa D  Zhou Zhongfu  Batcup Steve  Igic Petar 
Info 2006 IEEE International Symposium on Industrial Electronics, Vols 1-7, (2006), vol. br. , str. 447-452
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Modelling of strained-Si/SiGe NMOS transistors including DC self-heating (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  O'Neill AG 
Info SOLID-STATE ELECTRONICS, (2006), vol. 50 br. 3, str. 496-499
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line (Article)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, (2005), vol. 24 br. 10, str. 1550-1561
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V 
Info SOLID-STATE ELECTRONICS, (2005), vol. 49 br. 7, str. 1086-1089
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers (Article)
Autori Jankovic Nebojsa D  Armstrong GA 
Info MICROELECTRONICS JOURNAL, (2004), vol. 35 br. 8, str. 647-653
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science   Scopus  
Naslov Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis (Proceedings Paper)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, (2004), vol. br. , str. 261-264
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Self-heating effects in virtual substrate SiGeHBTs (Proceedings Paper)
Autori Jankovic Nebojsa D  Horsfall AB 
Info TELSIKS 2003: 6TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICE, VOLS 1 AND 2, PROCEEDINGS OF PAPERS, (2003), vol. br. , str. 573-576
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter (Article)
Autori Jankovic Nebojsa D  O'Neill AG 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2003), vol. 18 br. 9, str. 901-906
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics (Article)
Autori Kwa KSK  Chattopadhyay S  Jankovic Nebojsa D  Olsen SH  Driscoll LS  O'Neill AG 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2003), vol. 18 br. 2, str. 82-87
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation (Proceedings Paper)
Autori Pesic Tatjana V  Jankovic Nebojsa D  Huebers Heinz-Wilhelm 
Info ASDAM '02, CONFERENCE PROCEEDINGS, (2002), vol. br. , str. 187-190
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
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