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Autori: Jankovic Nebojsa D

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Naslov Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations (Article)
Autori Jankovic Nebojsa D  Igic Petar  Sakurai Naoki 
Info SOLID-STATE ELECTRONICS, (2010), vol. 54 br. 3, str. 268-274
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor (Article)
Autori Jankovic Nebojsa D  Zhou Zhongfu  Batcup Steve  Igic Petar 
Info INTERNATIONAL JOURNAL OF ELECTRONICS, (2009), vol. 96 br. 7, str. 767-779
Projekat TOYOTA Motor Corporation, Japan
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Proposal of a Double-Gate Split-Drain/Source MAGFET with Bulk Conduction in FD SOI Technology (Article)
Autori Jankovic Nebojsa D 
Info SENSORS AND MATERIALS, (2009), vol. 21 br. 3, str. 167-177
Projekat Serbian Ministry or Science and Technological Development
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Dynamic MAGFET model for sensor simulations (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  Pantic Dragan S 
Info IET CIRCUITS DEVICES & SYSTEMS, (2007), vol. 1 br. 4 , Suppl. , str. 270 -274
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov All injection level power PiN diode model including temperature dependence (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  Igic Petar 
Info SOLID-STATE ELECTRONICS, (2007), vol. 51 br. 5 , Suppl. , str. 719 -725
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modelling of strained-Si/SiGe NMOS transistors including DC self-heating (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V  O'Neill AG 
Info SOLID-STATE ELECTRONICS, (2006), vol. 50 br. 3, str. 496-499
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line (Article)
Autori Pesic Tatjana V  Jankovic Nebojsa D 
Info IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, (2005), vol. 24 br. 10, str. 1550-1561
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET (Article)
Autori Jankovic Nebojsa D  Pesic Tatjana V 
Info SOLID-STATE ELECTRONICS, (2005), vol. 49 br. 7, str. 1086-1089
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers (Article)
Autori Jankovic Nebojsa D  Armstrong GA 
Info MICROELECTRONICS JOURNAL, (2004), vol. 35 br. 8, str. 647-653
Ispravka ISI/Web of Science   Članak   Citati: ISI/Web of Science   Scopus  
Naslov Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter (Article)
Autori Jankovic Nebojsa D  O'Neill AG 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2003), vol. 18 br. 9, str. 901-906
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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