Autori: Jaksic Aleksandar B
Naslov | New experimental evidence of latent interface-trap buildup in power VDMOSFETs (Article) |
Autori | Jaksic Aleksandar B Ristic Goran S Pejovic Momcilo M |
Info | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2000), vol. 47 br. 3, str. 580-586 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors (Article) |
Autori | Ristic Goran S Pejovic Momcilo M Jaksic Aleksandar B |
Info | JOURNAL OF APPLIED PHYSICS, (2000), vol. 87 br. 7, str. 3468-3477 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |