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Autori: Jaksic Aleksandar B

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Naslov New experimental evidence of latent interface-trap buildup in power VDMOSFETs (Article)
Autori Jaksic Aleksandar B  Ristic Goran S  Pejovic Momcilo M 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2000), vol. 47 br. 3, str. 580-586
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors (Article)
Autori Ristic Goran S  Pejovic Momcilo M  Jaksic Aleksandar B 
Info JOURNAL OF APPLIED PHYSICS, (2000), vol. 87 br. 7, str. 3468-3477
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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