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Naslov Recharging process of commercial floating-gate MOS transistor in dosimetry application (Article)
Autori Ilic Stefan D  Andjelkovic Marko S  Duane Russell  Palma Alberto J  Sarajlic Milija J  Stankovic Srboljub J  Ristic Goran S 
Info MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. -
Projekat Ministry of Education, Science and Technological Development, Serbia [43011, 451-03-9/2021-14/200026]; European Commission, WIDESPREAD-2018-3-TWINNING, grantEuropean Commi
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Radiation sensitive MOSFETs irradiated with various positive gate biases (Article)
Autori Ristic Goran S  Ilic Stefan D  Duane Russell  Andjelkovic Marko S  Palma Alberto J  Lallena Antonio M  Krstic Milos D  Stankovic Srboljub J  Jaksic Aleksandar B 
Info JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES, (2021), vol. 14 br. 1, str. 353-357
Projekat European Union's Horizon 2020 research and innovation programme [857558]; Ministry of Education, Science and Technological Development, Serbia [43011]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor (Article)
Autori Ilic Stefan D  Jevtic Aleksandar S  Stankovic Srboljub J  Ristic Goran S 
Info SENSORS, (2020), vol. 20 br. 11, str. -
Projekat Ministry of Education, Science and Technology Development of the Republic of Serbia [43011]; European Commission Joint Research Centre [WIDESPREAD-2018-3-TWINNING, 857558 - ELICSIR]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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