Autori: Ilic Stefan D
Naslov | Recharging process of commercial floating-gate MOS transistor in dosimetry application (Article) |
Autori | Ilic Stefan D Andjelkovic Marko S Duane Russell Palma Alberto J Sarajlic Milija J Stankovic Srboljub J Ristic Goran S |
Info | MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. - |
Projekat | Ministry of Education, Science and Technological Development, Serbia [43011, 451-03-9/2021-14/200026]; European Commission, WIDESPREAD-2018-3-TWINNING, grantEuropean Commi |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Radiation sensitive MOSFETs irradiated with various positive gate biases (Article) |
Autori | Ristic Goran S Ilic Stefan D Duane Russell Andjelkovic Marko S Palma Alberto J Lallena Antonio M Krstic Milos D Stankovic Srboljub J Jaksic Aleksandar B |
Info | JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES, (2021), vol. 14 br. 1, str. 353-357 |
Projekat | European Union's Horizon 2020 research and innovation programme [857558]; Ministry of Education, Science and Technological Development, Serbia [43011] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor (Article) |
Autori | Ilic Stefan D Jevtic Aleksandar S Stankovic Srboljub J Ristic Goran S |
Info | SENSORS, (2020), vol. 20 br. 11, str. - |
Projekat | Ministry of Education, Science and Technology Development of the Republic of Serbia [43011]; European Commission Joint Research Centre [WIDESPREAD-2018-3-TWINNING, 857558 - ELICSIR] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |