Autori: Hadzi-Vukovic Jovan M
Naslov | Low frequency noise as a tool for diagnostic of ESD degraded GaAs mesfets (Article) |
Autori | Jevtic Milan M Hadzi-Vukovic Jovan M |
Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2009), vol. 11 br. 2, str. 155-163 |
Projekat | Serbian Ministry of Science and Environmental Protection |
Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science |
Naslov | The study of ESD induced defects in smart power ESD protection circuits using low frequency noise measurements (Proceedings Paper) |
Autori | Hadzi-Vukovic Jovan M Jevtic Milan M Glavanovics M Rothleitner H |
Info | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, (2008), vol. 205 br. 11, str. 2544-2547 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
Naslov | Diagnostics of GaAsHEMT based on noise measurements (Article) |
Autori | Jevtic Milan M Hadzi-Vukovic Jovan M |
Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2007), vol. 9 br. 11 , Suppl. , str. 3579 -3584 |
Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science |
Naslov | Study of the electrical cycling stressed large area Schottky diodes using I-V and noise measurements (Article) |
Autori | Jevtic Milan M Hadzi-Vukovic Jovan M |
Info | MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 1, str. 51-58 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | The voltage pulse degraded Ti/4H-SiC Schottky diodes studied with I-V and low frequency noise measurements (Article) |
Autori | Hadzi-Vukovic Jovan M Jevtic Milan M |
Info | DIAMOND AND RELATED MATERIALS, (2007), vol. 16 br. 1, str. 81-89 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Low frequency noise of GaAs MESFET degraded in ESD test (Proceedings Paper) |
Autori | Jevtic Milan M Hadzi-Vukovic Jovan M |
Info | 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 569-572 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | The study of PMOS V-th distribution using process and device Simulations and C-V measurements (Proceedings Paper) |
Autori | Hadzi-Vukovic Jovan M Jevtic Milan M |
Info | Eurocon 2005: The International Conference on Computer as a Tool, Vol 1 and 2 , Proceedings, (2005), vol. br. , str. 871-874 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | Pulse voltage stress degradation of 4H-SiC Schottky diodes studied by I-V and noise measurements (Proceedings Paper) |
Autori | Jevtic Milan M Hadzi-Vukovic Jovan M Dinu Dan |
Info | CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE VOL 1 AND 2, (2005), vol. br. , str. 369-372 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator (Article) |
Autori | Jevtic Milan M Hadzi-Vukovic Jovan M Ramovic Rifat M |
Info | MICROELECTRONICS JOURNAL, (2002), vol. 33 br. 11, str. 955-960 |
Ispravka | ISI/Web of Science Članak Citati: ISI/Web of Science Scopus |
Naslov | A novel analytical model of a SiC MOSFET (Proceedings Paper) |
Autori | Ramovic Rifat M Jevtic Milan M Hadzi-Vukovic Jovan M Randjelovic Danijela V |
Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 447-450 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |