Autori: Golubovic Snezana M
| Naslov | Gamma-irradiation effects in power MOSFETs for application in communication satellites (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Manic Ivica Dj Golubovic Snezana M |
| Info | TELSIKS 2001, VOL 1 & 2, PROCEEDINGS, (2001), vol. br. , str. 395-400 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2001), vol. 41 br. 9-10, str. 1373-1378 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
| Info | PROCEEDINGS OF THE 2001 8TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, (2001), vol. br. , str. 243-248 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
| Naslov | Modeling of gamma-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors (Erratum - errors in Authors - vol 38, pg 4699, 1999) (Correction) |
| Autori | Stojadinovic Ninoslav D Golubovic Snezana M Djoric-Veljkovic Snezana M Davidovic Vojkan S |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, (2001), vol. 40 br. 3A, str. 1530-1530 |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Radiation effects in low-temperature stressed power VDMOS transistors (Proceedings Paper) |
| Autori | Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, (2000), vol. br. , str. 337-340 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
