Autori: Golubovic Snezana M
| Naslov | Effects of electrical stressing in power VDMOSFETS (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2005), vol. 45 br. 1, str. 115-122 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs (Proceedings Paper) |
| Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, (2004), vol. br. , str. 701-704 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Effects of electrical stressing in power VDMOSFETs (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
| Info | 2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, (2003), vol. br. , str. 291-296 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs (Article) |
| Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | MICROELECTRONICS RELIABILITY, (2003), vol. 43 br. 9-11, str. 1455-1460 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Effects of burn-in stressing on radiation response of power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
| Info | MICROELECTRONICS JOURNAL, (2002), vol. 33 br. 11, str. 899-905 |
| Ispravka | ISI/Web of Science Članak Citati: ISI/Web of Science Scopus |
| Naslov | Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 9-11, str. 1465-1468 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 4-5, str. 669-677 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Effects of positive gate bias stress on radiation response in power VDMOSFETs (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
| Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 723-726 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
| Naslov | Spontaneous recovery of positive gate bias stressed power VDMOSFETs (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Dimitrijev Sima |
| Info | 2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2002), vol. br. , str. 717-721 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
| Naslov | Radiation hardening of power MOSFETs using electrical stress (Article) |
| Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
| Info | ELECTRONICS LETTERS, (2002), vol. 38 br. 9, str. 431-432 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
