Autori: Golubovic Snezana M
| Naslov | Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors (Article) |
| Autori | Davidovic Vojkan S Stojadinovic Ninoslav D Dankovic Danijel M Golubovic Snezana M Manic Ivica Dj Djoric-Veljkovic Snezana M Dimitrijev Sima |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2008), vol. 47 br. 8, str. 6272-6276 |
| Projekat | Ministry of Science of the Republic of Serbia |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs (Proceedings Paper) |
| Autori | Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | 2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, (2008), vol. br. , str. 599-602 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs (Article) |
| Autori | Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | IET CIRCUITS DEVICES & SYSTEMS, (2008), vol. 2 br. 2, str. 213-221 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs (Proceedings Paper) |
| Autori | Stojadinovic Ninoslav D Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M |
| Info | TELSIKS 2007: 8TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, VOLS 1 AND 2, (2007), vol. br. , str. 275-282 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs (Article) |
| Autori | Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 9-11 , Suppl. , str. 1400 -1405 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs (Article) |
| Autori | Dankovic Danijel M Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | MICROELECTRONICS RELIABILITY, (2006), vol. 46 br. 9-11, str. 1828-1833 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Electrical stressing effects in commercial power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
| Info | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, (2006), vol. 153 br. 3, str. 281-288 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Lifetime estimation in NBT stressed P-channel power VDMOSFETs (Proceedings Paper) |
| Autori | Dankovic Danijel M Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 645-648 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Spontaneous recovery in DC gate bias stressed power VDMOSFETs (Proceedings Paper) |
| Autori | Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 639-644 |
| Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
| Naslov | Negative bias temperature instability mechanisms in p-channel power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Dankovic Danijel M Djoric-Veljkovic Snezana M Davidovic Vojkan S Manic Ivica Dj Golubovic Snezana M |
| Info | MICROELECTRONICS RELIABILITY, (2005), vol. 45 br. 9-11, str. 1343-1348 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
