Autori: Fazio Enza
| Naslov | GaN HEMT Modeling versus Bias Point and Gate Width (Proceedings Paper) |
| Autori | Crupi Giovanni Latino Mariangela Gugliandolo Giovanni Marinkovic Zlatica D Cai Jialin Fazio Enza Donato Nicola |
| Info | 2023 58TH INTERNATIONAL SCIENTIFIC CONFERENCE ON INFORMATION, COMMUNICATION AND ENERGY SYSTEMS AND TECHNOLOGIES, ICEST, (2023), vol. br. , str. 211-214 |
| Projekat | GaN4AP (GaN for Advanced Power Applications) project [CUP: B82C21001520008]; Ministry of Science, Technological Development and Innovations of the Republic of Serbia |
| Ispravka | ISI/Web of Science Članak |
| Naslov | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) (Article) |
| Autori | Crupi Giovanni Latino Mariangela Gugliandolo Giovanni Marinkovic Zlatica D Cai Jialin Bosi Gianni Raffo Antonio Fazio Enza Donato Nicola |
| Info | ELECTRONICS, (2023), vol. 12 br. 8, str. - |
| Projekat | Italian Ministry of University and Research (MUR) through the PRIN [2017FL8C9N]; Ministry of Science, Technological Development and Innovations of the Republic of Serbia; GaN4AP (GaN for Advanced Power Applications) project [CUP: B82C21001520008] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa |
