Autori: Duane Russell
| Naslov | A Design Concept for Radiation Hardened RADFET Readout System for Space Applications (Article) |
| Autori | Andjelkovic Marko Simevski Aleksandar Chen Junchao Schrape Oliver Stamenkovic Zoran Krstic Milos D Ilic Stefan D Ristic Goran S Jaksic Aleksandar B Vasovic Nikola Duane Russell Palma Alberto J Lallena Antonio M Carvajal Miguel Angel |
| Info | MICROPROCESSORS AND MICROSYSTEMS, (2022), vol. 90 br. , str. - |
| Projekat | European Union [857558] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Sensitivity and fading of irradiated RADFETs with different gate voltages (Article) |
| Autori | Ristic Goran S Ilic Stefan D Andjelkovic Marko S Duane Russell Palma Alberto J Lalena Antonio M Krstic Milos D Jaksic Aleksandar B |
| Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, (2022), vol. 1029 br. , str. - |
| Projekat | European UnionEuropean Commission [857558]; Ministry of Education, Science and Technological Development of the Republic of SerbiaMinistry of Education, Science & Technological Development, Serbia [43011] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Fading of pMOS dosimeters over a long period of time (Letter) |
| Autori | Ristic Goran S Andjelkovic Marko S Duane Russell Jaksic Aleksandar B |
| Info | MICRO & NANO LETTERS, (2022), vol. 17 br. 7, str. 155-158 |
| Projekat | European UnionEuropean Commission [857558]; Ministry of Education, Science and Technological Development of the Republic of SerbiaMinistry of Education, Science & Technological Development, Serbia [43011] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Recharging process of commercial floating-gate MOS transistor in dosimetry application (Article) |
| Autori | Ilic Stefan D Andjelkovic Marko S Duane Russell Palma Alberto J Sarajlic Milija J Stankovic Srboljub J Ristic Goran S |
| Info | MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. - |
| Projekat | Ministry of Education, Science and Technological Development, Serbia [43011, 451-03-9/2021-14/200026]; European Commission, WIDESPREAD-2018-3-TWINNING, grantEuropean Commi |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Radiation sensitive MOSFETs irradiated with various positive gate biases (Article) |
| Autori | Ristic Goran S Ilic Stefan D Duane Russell Andjelkovic Marko S Palma Alberto J Lallena Antonio M Krstic Milos D Stankovic Srboljub J Jaksic Aleksandar B |
| Info | JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES, (2021), vol. 14 br. 1, str. 353-357 |
| Projekat | European Union's Horizon 2020 research and innovation programme [857558]; Ministry of Education, Science and Technological Development, Serbia [43011] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm (Article) |
| Autori | Ristic Goran S Andjelkovic Marko S Duane Russell Palma Alberto J Jaksic Aleksandar B |
| Info | SENSORS AND MATERIALS, (2021), vol. 33 br. 6, str. 2109-2116 |
| Projekat | European Union's Horizon 2020 research and innovation programme [857558]; Ministry of Education, Science and Technological Development, Serbia [43011] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
