Autori: Djoric-Veljkovic Snezana M
| Naslov | Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2002), vol. 42 br. 4-5, str. 669-677 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Radiation hardening of power MOSFETs using electrical stress (Article) |
| Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M |
| Info | ELECTRONICS LETTERS, (2002), vol. 38 br. 9, str. 431-432 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs (Article) |
| Autori | Stojadinovic Ninoslav D Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Dimitrijev Sima |
| Info | MICROELECTRONICS RELIABILITY, (2001), vol. 41 br. 9-10, str. 1373-1378 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
