Autori: Djoric-Veljkovic Snezana M
Naslov | Impact of negative bias temperature instabilities on lifetime in p-channel power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M |
Info | TELSIKS 2007: 8TH INTERNATIONAL CONFERENCE ON TELECOMMUNICATIONS IN MODERN SATELLITE, CABLE AND BROADCASTING SERVICES, VOLS 1 AND 2, (2007), vol. br. , str. 275-282 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs (Article) |
Autori | Dankovic Danijel M Manic Ivica Dj Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Stojadinovic Ninoslav D |
Info | MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 9-11 , Suppl. , str. 1400 -1405 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs (Article) |
Autori | Dankovic Danijel M Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
Info | MICROELECTRONICS RELIABILITY, (2006), vol. 46 br. 9-11, str. 1828-1833 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Electrical stressing effects in commercial power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
Info | IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, (2006), vol. 153 br. 3, str. 281-288 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Lifetime estimation in NBT stressed P-channel power VDMOSFETs (Proceedings Paper) |
Autori | Dankovic Danijel M Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
Info | 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 645-648 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | Spontaneous recovery in DC gate bias stressed power VDMOSFETs (Proceedings Paper) |
Autori | Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
Info | 2006 25th International Conference on Microelectronics, Vols 1 and 2, Proceedings, (2006), vol. br. , str. 639-644 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | Negative bias temperature instability mechanisms in p-channel power VDMOSFETs (Article) |
Autori | Stojadinovic Ninoslav D Dankovic Danijel M Djoric-Veljkovic Snezana M Davidovic Vojkan S Manic Ivica Dj Golubovic Snezana M |
Info | MICROELECTRONICS RELIABILITY, (2005), vol. 45 br. 9-11, str. 1343-1348 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Effects of electrical stressing in power VDMOSFETS (Article) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
Info | MICROELECTRONICS RELIABILITY, (2005), vol. 45 br. 1, str. 115-122 |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs (Proceedings Paper) |
Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Golubovic Snezana M Stojadinovic Ninoslav D |
Info | 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2, (2004), vol. br. , str. 701-704 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |
Naslov | Effects of electrical stressing in power VDMOSFETs (Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Djoric-Veljkovic Snezana M Golubovic Snezana M Dimitrijev Sima |
Info | 2003 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, (2003), vol. br. , str. 291-296 |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science |