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Autori: Djoric-Veljkovic Snezana M

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Naslov Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article)
Autori Davidovic Vojkan S  Dankovic Danijel M  Ilic Aleksandar  Manic Ivica Dj  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Prijic Zoran D  Prijic Aneta P  Stojadinovic Ninoslav D 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. -
Projekat Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article)
Autori Davidovic Vojkan S  Dankovic Danijel M  Ilic Aleksandar  Manic Ivica Dj  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article)
Autori Dankovic Danijel M  Stojadinovic Ninoslav D  Prijic Zoran D  Manic Ivica Dj  Davidovic Vojkan S  Prijic Aneta P  Djoric-Veljkovic Snezana M  Golubovic Snezana M 
Info CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Prijic Aneta P  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Stojadinovic Ninoslav D  Prijic Zoran D  Golubovic Snezana M 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2015), vol. 30 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors (Article)
Autori Djoric-Veljkovic Snezana M  Manic Ivica Dj  Davidovic Vojkan S  Dankovic Danijel M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2015), vol. 54 br. 6, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Importance of building orientation in determining daylighting quality in student dorm rooms: Physical and simulated daylighting parameters' values compared to subjective survey results (Article)
Autori Jovanovic A  Pejic Petar C  Djoric-Veljkovic Snezana M  Karamarkovic Jugoslav P  Djelic Milos 
Info ENERGY AND BUILDINGS, (2014), vol. 77 br. , str. 158-170
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power Vdmosfet (Article)
Autori Djoric-Veljkovic Snezana M  Manic Ivica Dj  Davidovic Vojkan S  Dankovic Danijel M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2013), vol. 28 br. 4, str. 406-414
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Prijic Aneta P  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2013), vol. 43 br. 1, str. 58-66
Projekat Ministry of Education and Science of the Republic of Serbia [OI171026, TR32026]; Ei PCB Factory, Nis, Serbia
Ispravka ISI/Web of Science   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions (Article)
Autori Manic Ivica Dj  Dankovic Danijel M  Prijic Aneta P  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2011), vol. 51 br. 9-11, str. 1540-1543
Projekat Ministry of Science of the Republic of Serbia[0171026, TR32026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets (Article)
Autori Djoric-Veljkovic Snezana M  Manic Ivica Dj  Davidovic Vojkan S  Dankovic Danijel M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2011), vol. 26 br. 1, str. 18-24
Projekat Ministry of Science and Technological Development of Republic of Serbia
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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