Autori: Davidovic Vojkan S
| Naslov | Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article) |
| Autori | Dankovic Danijel M Stojadinovic Ninoslav D Prijic Zoran D Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Djoric-Veljkovic Snezana M Golubovic Snezana M |
| Info | CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. - |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation (Article) |
| Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Djoric-Veljkovic Snezana M Davidovic Vojkan S Stojadinovic Ninoslav D Prijic Zoran D Golubovic Snezana M |
| Info | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2015), vol. 30 br. 10, str. - |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors (Article) |
| Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2015), vol. 54 br. 6, str. - |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power Vdmosfet (Article) |
| Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2013), vol. 28 br. 4, str. 406-414 |
| Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs (Article) |
| Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D |
| Info | INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2013), vol. 43 br. 1, str. 58-66 |
| Projekat | Ministry of Education and Science of the Republic of Serbia [OI171026, TR32026]; Ei PCB Factory, Nis, Serbia |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions (Article) |
| Autori | Manic Ivica Dj Dankovic Danijel M Prijic Aneta P Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D |
| Info | MICROELECTRONICS RELIABILITY, (2011), vol. 51 br. 9-11, str. 1540-1543 |
| Projekat | Ministry of Science of the Republic of Serbia[0171026, TR32026] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets (Article) |
| Autori | Djoric-Veljkovic Snezana M Manic Ivica Dj Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | NUCLEAR TECHNOLOGY & RADIATION PROTECTION, (2011), vol. 26 br. 1, str. 18-24 |
| Projekat | Ministry of Science and Technological Development of Republic of Serbia |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors (Article) |
| Autori | Davidovic Vojkan S Stojadinovic Ninoslav D Dankovic Danijel M Golubovic Snezana M Manic Ivica Dj Djoric-Veljkovic Snezana M Dimitrijev Sima |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2008), vol. 47 br. 8, str. 6272-6276 |
| Projekat | Ministry of Science of the Republic of Serbia |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs (Article) |
| Autori | Manic Ivica Dj Djoric-Veljkovic Snezana M Davidovic Vojkan S Dankovic Danijel M Golubovic Snezana M Stojadinovic Ninoslav D |
| Info | IET CIRCUITS DEVICES & SYSTEMS, (2008), vol. 2 br. 2, str. 213-221 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
| Naslov | Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors (Article) |
| Autori | Davidovic Vojkan S Kouvatsos DN Stojadinovic Ninoslav D Voutsas AT |
| Info | MICROELECTRONICS RELIABILITY, (2007), vol. 47 br. 9-11 , Suppl. , str. 1841 -1845 |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
