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Naslov Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article)
Autori Davidovic Vojkan S  Dankovic Danijel M  Ilic Aleksandar  Manic Ivica Dj  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Prijic Zoran D  Prijic Aneta P  Stojadinovic Ninoslav D 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. -
Projekat Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs (Proceedings Paper)
Autori Dankovic Danijel M  Manic Ivica Dj  Stojadinovic Ninoslav D  Prijic Zoran D  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Prijic Aneta P  Paskaleva Albena  Spassov Dencho  Golubovic Snezana M 
Info 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 147-151
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts (SASA) [F-148]
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks (Proceedings Paper)
Autori Davidovic Vojkan S  Paskaleva Albena  Spassov Dencho  Guziewicz Elzbieta  Krajewski T  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Manic Ivica Dj  Dankovic Danijel M  Stojadinovic Ninoslav D 
Info 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 143-146
Projekat SASA [F-148]
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Davidovic Vojkan S  Prijic Aneta P  Marjanovic Milos B  Ilic Aleksandar  Prijic Zoran D  Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, (2016), vol. 16 br. 4, str. 522-531
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis, Serbia
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article)
Autori Davidovic Vojkan S  Dankovic Danijel M  Ilic Aleksandar  Manic Ivica Dj  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling and PSPICE Simulation of Radiation Stress Influence on Threshold Voltage Shifts in P-Channel Power VDMOS Transistors (Proceedings Paper)
Autori Marjanovic Milos B  Dankovic Danijel M  Davidovic Vojkan S  Prijic Aneta P  Stojadinovic Ninoslav D  Prijic Zoran D  Jankovic Nebojsa D 
Info RAD 2015: THE THIRD INTERNATIONAL CONFERENCE ON RADIATION AND APPLICATIONS IN VARIOUS FIELDS OF RESEARCH, (2015), vol. br. , str. 405-408
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article)
Autori Dankovic Danijel M  Stojadinovic Ninoslav D  Prijic Zoran D  Manic Ivica Dj  Davidovic Vojkan S  Prijic Aneta P  Djoric-Veljkovic Snezana M  Golubovic Snezana M 
Info CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation (Article)
Autori Dankovic Danijel M  Manic Ivica Dj  Prijic Aneta P  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Stojadinovic Ninoslav D  Prijic Zoran D  Golubovic Snezana M 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2015), vol. 30 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors (Article)
Autori Djoric-Veljkovic Snezana M  Manic Ivica Dj  Davidovic Vojkan S  Dankovic Danijel M  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2015), vol. 54 br. 6, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Recovery Treatment Effects on Gamma Radiation Response in Electrically Stressed Power VDMOS Transistors (Proceedings Paper)
Autori Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Dankovic Danijel M  Manic Ivica Dj  Golubovic Snezana M  Stojadinovic Ninoslav D 
Info 2014 29TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS PROCEEDINGS - MIEL 2014, (2014), vol. br. , str. 293-296
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
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