Autori: Chernysh VS
| Naslov | Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon (Article) |
| Autori | Balakshin Yu V Kozhemiako AV Petrovic Srdjan M Eric Marko V Shemukhin AA Chernysh VS |
| Info | SEMICONDUCTORS, (2019), vol. 53 br. 8, str. 1011-1017 |
| Projekat | Russian Foundation for Basic Research [18-32-00833mol_a]; Ministry of Education, Science, and Technological Development of Serbia [III 45006] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
