Autori: Bosi Gianni
| Naslov | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) (Article) |
| Autori | Crupi Giovanni Latino Mariangela Gugliandolo Giovanni Marinkovic Zlatica D Cai Jialin Bosi Gianni Raffo Antonio Fazio Enza Donato Nicola |
| Info | ELECTRONICS, (2023), vol. 12 br. 8, str. - |
| Projekat | Italian Ministry of University and Research (MUR) through the PRIN [2017FL8C9N]; Ministry of Science, Technological Development and Innovations of the Republic of Serbia; GaN4AP (GaN for Advanced Power Applications) project [CUP: B82C21001520008] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa |
