Autori: Armstrong GA
| Naslov | Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers (Article) |
| Autori | Jankovic Nebojsa D Armstrong GA |
| Info | MICROELECTRONICS JOURNAL, (2004), vol. 35 br. 8, str. 647-653 |
| Ispravka | ISI/Web of Science Članak Citati: ISI/Web of Science Scopus |
