Autori: Alkoash Abedalkhem
| Naslov | An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs (Article) |
| Autori | Alkoash Abedalkhem Sasic Rajko M Ostojic Stanko M Lukic Petar M |
| Info | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, (2011), vol. 8 br. 1, str. 47-50 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ostojic Stanko M Alkoash Abedalkhem |
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2010), vol. 12 br. 5, str. 1161-1164 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science |
