Autori: Abood Imhimmad
| Naslov | Surrounding gate long channel nanowire MOSFET modelling-extended analysis (Article; Proceedings Paper) |
| Autori | Ostojic Stanko M Sasic Rajko M Lukic Petar M Abood Imhimmad |
| Info | PHYSICA SCRIPTA, (2014), vol. 89 br. 11, str. - |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy (Article) |
| Autori | Abood Imhimmad Sasic Rajko M Ostojic Stanko M Lukic Petar M |
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2013), vol. 52 br. 9, str. - |
| Projekat | Ministry of Science and Technological Development, Government of the Republic of Serbia [45003] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
| Naslov | 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance (Article) |
| Autori | Abood Imhimmad Lukic Petar M Sasic Rajko M Alkoash Abed Alkhem Ostojic Stanko M |
| Info | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, (2013), vol. 7 br. 5-6, str. 329-333 |
| Projekat | Ministry of Science and Technological Development, Goverment of the Republic of Serbia [45003] |
| Ispravka | ISI/Web of Science Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
