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Autori: Vasovic Nikola D

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Naslov Automatic and Reliable Electrical Characterization of MOSFETs (Proceedings Paper)
Autori Stamenkovic Zoran  Vasovic Nikola D  Ristic Goran S 
Info PROCEEDINGS OF THE 2014 IEEE 17TH INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS), (2014), vol. br. , str. 262-265
Ispravka ISI/Web of Science   Citati: ISI/Web of Science  
Naslov The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs (Article)
Autori Ristic Goran S  Vasovic Nikola D  Jaksic Aleksandar B 
Info JOURNAL OF PHYSICS D-APPLIED PHYSICS, (2012), vol. 45 br. 30, str. -
Projekat Ministry of Education and Science of the Republic of Serbia[III43011]; European Commission[207 122 RADDOS]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs (Article)
Autori Vasovic Nikola D  Ristic Goran S 
Info MEASUREMENT, (2012), vol. 45 br. 7, str. 1922-1926
Projekat Ministry of Science and Technology Development of the Republic of Serbia[43011]; European Commission[207 122 RADDOS]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A new microcontroller-based RADFET dosimeter reader (Article)
Autori Vasovic Nikola D  Ristic Goran S 
Info RADIATION MEASUREMENTS, (2012), vol. 47 br. 4, str. 272-276
Projekat Ministry of Science and Technology Development of the Republic of Serbia[43011]; European Commission[207 122 RADDOS]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A system for gas electrical breakdown time delay measurements based on a microcontroller (Article)
Autori Todorovic Miomir  Vasovic Nikola D  Ristic Goran S 
Info MEASUREMENT SCIENCE & TECHNOLOGY, (2012), vol. 23 br. 1, str. -
Projekat Ministry of Education and Science of the Republic of Serbia[43011]; European Commission[207 122 RADDOS]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si) (Article)
Autori Ristic Goran S  Vasovic Nikola D  Kovacevic Milojko S  Jaksic Aleksandar B 
Info NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2011), vol. 269 br. 23, str. 2703-2708
Projekat Ministry of Education and Science of the Republic of Serbia[11143011]; European Commission[207 122 RADDOS]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 degrees C (Article)
Autori Ristic Goran S  Vasovic Nikola D 
Info SEMICONDUCTOR SCIENCE AND TECHNOLOGY, (2011), vol. 26 br. 8, str. -
Projekat Ministry of Science and Technology Development of the Republic of Serbia[43011]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices (Article)
Autori Pejovic Milic M  Denic Dragan B  Pejovic Momcilo M  Nesic Nikola T  Vasovic Nikola D 
Info REVIEW OF SCIENTIFIC INSTRUMENTS, (2010), vol. 81 br. 10, str. -
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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