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Naslov The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO2/SiO2 Double-Layer (Article)
Autori Marjanovic Milos B  Ilic Stefan D  Veljkovic Sandra  Mitrovic Nikola I  Gurer Umutcan  Yilmaz Ozan  Kahraman Aysegul  Aktag Aliekber  Karacali Huseyin  Budak Erhan  Dankovic Danijel M  Ristic Goran S  Yilmaz Ercan 
Info SENSORS, (2025), vol. 25 br. 2, str. -
Projekat North Atlantic Treaty Organization (NATO) SPS MYP; Ministry of Science, Technological Development and Innovation of the Republic of Serbia [451-03-65/2024-03/200102, 451-03-66/2024-03/200026]; [G5974]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa  
Naslov Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors (Article)
Autori Djoric-Veljkovic Snezana M  Zivanovic Emilija N  Davidovic Vojkan S  Veljkovic Sandra  Mitrovic Nikola I  Ristic Goran S  Paskaleva Albena  Spassov Dencho  Dankovic Danijel M 
Info MICROMACHINES, (2025), vol. 16 br. 1, str. -
Projekat European Union's Horizon 2024 research and innovation program [SPS G5974-"High-k Dielectric RADFET]; European Union's Horizon 2024 research and innovation program through the AIDA4Edge Twinning project [101160293]; Ministry of Science, Technological Development and Innovation of the Republic of Serbia [451-03-65/2024-03/200102, 451-03-65/2024-03/200095]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa  
Naslov Thermal Annealing-Induced Recovery of the VT of Irradiated Commercial MOS Transistors (Article; Early Access)
Autori Mitrovic Nikola I  Guirado Damian  Dankovic Danijel M  Palma Alberto J  Ristic Goran S  Carvajal Miguel A 
Info JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, (2024), vol. br. , str. -
Projekat Ministry of Science, Technological Development and Innovations of the Republic of Serbia [451-03-65/2024-03/200102]; European Union's Horizon 2020 research and innovation program [857558 - ELICSIR]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati:
Naslov A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress (Article)
Autori Zivanovic Emilija N  Veljkovic Sandra  Mitrovic Nikola I  Jovanovic Igor D  Djoric-Veljkovic Snezana M  Paskaleva Albena  Spassov Dencho  Dankovic Danijel M 
Info MICROMACHINES, (2024), vol. 15 br. 4, str. -
Projekat Serbian Ministry of Science, Technological Development and Innovation
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa  
Naslov Self-heating of stressed VDMOS devices under specific operating conditions (Article)
Autori Veljkovic Sandra  Mitrovic Nikola I  Jovanovic Igor D  Zivanovic Emilija N  Paskaleva Albena  Spassov Dencho  Mancic Dragan D  Dankovic Danijel M 
Info MICROELECTRONICS RELIABILITY, (2023), vol. 150 br. , str. -
Projekat Ministry of Education, Science, Technological Development and Innovation of the Republic of Serbia [451-03-9/2021-14/200102]; Bulgarian National Scientific Fund [KP-06-H37/32]; [SPS G5974]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa  
Naslov The Importance of Students' Practical Work in High Schools for Higher Education in Electronic Engineering (Article)
Autori Dankovic Danijel M  Marjanovic Milos B  Mitrovic Nikola I  Zivanovic Emilija N  Dankovic Milan  Prijic Aneta P  Prijic Zoran D 
Info IEEE TRANSACTIONS ON EDUCATION, (2023), vol. 66 br. 2, str. 146-155
Projekat Serbian Ministry of Education, Science, and Technological Development [451-0368/2022-14/200102]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications (Article)
Autori Mitrovic Nikola I  Veljkovic Sandra  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Zivanovic Emilija N  Prijic Zoran D  Dankovic Danijel M 
Info MICROELECTRONICS RELIABILITY, (2022), vol. 138 br. , str. -
Projekat European Union [857558]; Republic of Serbia [451-03-9/2021-14/200102]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress (Article)
Autori Veljkovic Sandra  Mitrovic Nikola I  Davidovic Vojkan S  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Paskaleva Albena  Spassov Dencho  Stankovic Srboljub J  Andjelkovic Marko Lj  Prijic Zoran D  Manic Ivica Dj  Prijic Aneta P  Ristic Goran S  Dankovic Danijel M 
Info JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, (2022), vol. 31 br. 18, str. -
Projekat European Union's Horizon 2020 research and innovation program [857558-ELICSIR]; Ministry of Education, Science and Technology Development of the Republic of Serbia [451-03-9/2021-14/200102]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Davidovic Vojkan S  Golubovic Snezana M  Veljkovic Sandra  Mitrovic Nikola I  Djoric-Veljkovic Snezana M 
Info MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. -
Projekat Ministry of Education, Science and Technological Development, Serbia [OI-171026, TR-32026]; [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method (Article)
Autori Mitrovic Nikola I  Dankovic Danijel M  Randjelovic Branislav M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, (2020), vol. 50 br. 3, str. 205-214
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia; Serbian Academy of Science and Arts
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
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