Autori: Harissopulos S
| Naslov | Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals (Article) |
| Autori | Eric Marko V Petrovic Srdjan M Kokkoris M Lagoyannis A Paneta V Harissopulos S Telecki Igor N |
| Info | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, (2012), vol. 274 br. , str. 87-92 |
| Projekat | Ministry of Education and Science of Serbia[45006]; European Commission[227012] |
| Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
