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Autori: Golubovic Snezana M

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Naslov Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications (Article)
Autori Mitrovic Nikola I  Veljkovic Sandra  Davidovic Vojkan S  Djoric-Veljkovic Snezana M  Golubovic Snezana M  Zivanovic Emilija N  Prijic Zoran D  Dankovic Danijel M 
Info MICROELECTRONICS RELIABILITY, (2022), vol. 138 br. , str. -
Projekat European Union [857558]; Republic of Serbia [451-03-9/2021-14/200102]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
Naslov Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress (Article)
Autori Veljkovic Sandra  Mitrovic Nikola I  Davidovic Vojkan S  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Paskaleva Albena  Spassov Dencho  Stankovic Srboljub J  Andjelkovic Marko Lj  Prijic Zoran D  Manic Ivica Dj  Prijic Aneta P  Ristic Goran S  Dankovic Danijel M 
Info JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, (2022), vol. 31 br. 18, str. -
Projekat European Union's Horizon 2020 research and innovation program [857558-ELICSIR]; Ministry of Education, Science and Technology Development of the Republic of Serbia [451-03-9/2021-14/200102]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs (Article)
Autori Dankovic Danijel M  Davidovic Vojkan S  Golubovic Snezana M  Veljkovic Sandra  Mitrovic Nikola I  Djoric-Veljkovic Snezana M 
Info MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. -
Projekat Ministry of Education, Science and Technological Development, Serbia [OI-171026, TR-32026]; [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov NBTI and irradiation related degradation mechanisms in power VDMOS transistors (Article; Proceedings Paper)
Autori Stojadinovic Ninoslav D  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Golubovic Snezana M  Stankovic Srboljub J  Prijic Aneta P  Prijic Zoran D  Manic Ivica Dj  Dankovic Danijel M 
Info MICROELECTRONICS RELIABILITY, (2018), vol. 88-90 br. , str. 135-141
Projekat Ministry of Education, Science and Technological Development of Republic of Serbia [OI-171026]; Serbian Academy of Science and Arts (SASA) [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov A review of pulsed NBTI in P-channel power VDMOSFETs (Review)
Autori Dankovic Danijel M  Manic Ivica Dj  Prijic Aneta P  Davidovic Vojkan S  Prijic Zoran D  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Paskaleva Albena  Spassov Dencho  Stojadinovic Ninoslav D 
Info MICROELECTRONICS RELIABILITY, (2018), vol. 82 br. , str. 28-36
Projekat Ministry of Science of the Republic of Serbia [OI-171026, TR-32026]; SASA [F-148]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article)
Autori Davidovic Vojkan S  Dankovic Danijel M  Ilic Aleksandar  Manic Ivica Dj  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Prijic Zoran D  Prijic Aneta P  Stojadinovic Ninoslav D 
Info JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. -
Projekat Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs (Proceedings Paper)
Autori Dankovic Danijel M  Manic Ivica Dj  Stojadinovic Ninoslav D  Prijic Zoran D  Djoric-Veljkovic Snezana M  Davidovic Vojkan S  Prijic Aneta P  Paskaleva Albena  Spassov Dencho  Golubovic Snezana M 
Info 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 147-151
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts (SASA) [F-148]
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks (Proceedings Paper)
Autori Davidovic Vojkan S  Paskaleva Albena  Spassov Dencho  Guziewicz Elzbieta  Krajewski T  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Manic Ivica Dj  Dankovic Danijel M  Stojadinovic Ninoslav D 
Info 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 143-146
Projekat SASA [F-148]
Ispravka ISI/Web of Science   Citati: ISI/Web of Science   Scopus  
Naslov NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article)
Autori Davidovic Vojkan S  Dankovic Danijel M  Ilic Aleksandar  Manic Ivica Dj  Golubovic Snezana M  Djoric-Veljkovic Snezana M  Prijic Zoran D  Stojadinovic Ninoslav D 
Info IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026]
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science   Scopus  
Naslov Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article)
Autori Dankovic Danijel M  Stojadinovic Ninoslav D  Prijic Zoran D  Manic Ivica Dj  Davidovic Vojkan S  Prijic Aneta P  Djoric-Veljkovic Snezana M  Golubovic Snezana M 
Info CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. -
Projekat Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis
Ispravka ISI/Web of Science   Članak   Elečas   Rang časopisa   Citati: ISI/Web of Science  
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