Autori: Golubovic Snezana M
Naslov | Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications (Article) |
Autori | Mitrovic Nikola I Veljkovic Sandra Davidovic Vojkan S Djoric-Veljkovic Snezana M Golubovic Snezana M Zivanovic Emilija N Prijic Zoran D Dankovic Danijel M |
Info | MICROELECTRONICS RELIABILITY, (2022), vol. 138 br. , str. - |
Projekat | European Union [857558]; Republic of Serbia [451-03-9/2021-14/200102] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |
Naslov | Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress (Article) |
Autori | Veljkovic Sandra Mitrovic Nikola I Davidovic Vojkan S Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stankovic Srboljub J Andjelkovic Marko Lj Prijic Zoran D Manic Ivica Dj Prijic Aneta P Ristic Goran S Dankovic Danijel M |
Info | JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, (2022), vol. 31 br. 18, str. - |
Projekat | European Union's Horizon 2020 research and innovation program [857558-ELICSIR]; Ministry of Education, Science and Technology Development of the Republic of Serbia [451-03-9/2021-14/200102] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs (Article) |
Autori | Dankovic Danijel M Davidovic Vojkan S Golubovic Snezana M Veljkovic Sandra Mitrovic Nikola I Djoric-Veljkovic Snezana M |
Info | MICROELECTRONICS RELIABILITY, (2021), vol. 126 br. , str. - |
Projekat | Ministry of Education, Science and Technological Development, Serbia [OI-171026, TR-32026]; [F-148] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | NBTI and irradiation related degradation mechanisms in power VDMOS transistors (Article; Proceedings Paper) |
Autori | Stojadinovic Ninoslav D Djoric-Veljkovic Snezana M Davidovic Vojkan S Golubovic Snezana M Stankovic Srboljub J Prijic Aneta P Prijic Zoran D Manic Ivica Dj Dankovic Danijel M |
Info | MICROELECTRONICS RELIABILITY, (2018), vol. 88-90 br. , str. 135-141 |
Projekat | Ministry of Education, Science and Technological Development of Republic of Serbia [OI-171026]; Serbian Academy of Science and Arts (SASA) [F-148] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | A review of pulsed NBTI in P-channel power VDMOSFETs (Review) |
Autori | Dankovic Danijel M Manic Ivica Dj Prijic Aneta P Davidovic Vojkan S Prijic Zoran D Golubovic Snezana M Djoric-Veljkovic Snezana M Paskaleva Albena Spassov Dencho Stojadinovic Ninoslav D |
Info | MICROELECTRONICS RELIABILITY, (2018), vol. 82 br. , str. 28-36 |
Projekat | Ministry of Science of the Republic of Serbia [OI-171026, TR-32026]; SASA [F-148] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors (Article) |
Autori | Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Prijic Aneta P Stojadinovic Ninoslav D |
Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2018), vol. 57 br. 4, str. - |
Projekat | Serbian Academy of Sciences and Arts (SASA) [F-148]; Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs (Proceedings Paper) |
Autori | Dankovic Danijel M Manic Ivica Dj Stojadinovic Ninoslav D Prijic Zoran D Djoric-Veljkovic Snezana M Davidovic Vojkan S Prijic Aneta P Paskaleva Albena Spassov Dencho Golubovic Snezana M |
Info | 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 147-151 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Serbian Academy of Sciences and Arts (SASA) [F-148] |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
Naslov | Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks (Proceedings Paper) |
Autori | Davidovic Vojkan S Paskaleva Albena Spassov Dencho Guziewicz Elzbieta Krajewski T Golubovic Snezana M Djoric-Veljkovic Snezana M Manic Ivica Dj Dankovic Danijel M Stojadinovic Ninoslav D |
Info | 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), (2017), vol. br. , str. 143-146 |
Projekat | SASA [F-148] |
Ispravka | ISI/Web of Science Citati: ISI/Web of Science Scopus |
Naslov | NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors (Article) |
Autori | Davidovic Vojkan S Dankovic Danijel M Ilic Aleksandar Manic Ivica Dj Golubovic Snezana M Djoric-Veljkovic Snezana M Prijic Zoran D Stojadinovic Ninoslav D |
Info | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, (2016), vol. 63 br. 2, str. 1268-1275 |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026] |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science Scopus |
Naslov | Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET (Article) |
Autori | Dankovic Danijel M Stojadinovic Ninoslav D Prijic Zoran D Manic Ivica Dj Davidovic Vojkan S Prijic Aneta P Djoric-Veljkovic Snezana M Golubovic Snezana M |
Info | CHINESE PHYSICS B, (2015), vol. 24 br. 10, str. - |
Projekat | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]; Ei PCB Factory, Nis |
Ispravka | ISI/Web of Science Članak Elečas Rang časopisa Citati: ISI/Web of Science |