@ARTICLE{
author={Stamenkovic Zoran,Vasovic Nikola D,Ristic Goran S},
year={2014},
title={Automatic and Reliable Electrical Characterization of MOSFETs},
journal={PROCEEDINGS OF THE 2014 IEEE 17TH INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS)},
volume={},
number={},
pages={262-265},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D,Jaksic Aleksandar B},
year={2012},
title={The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={45},
number={30},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Vasovic Nikola D,Ristic Goran S},
year={2012},
title={A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs},
journal={MEASUREMENT},
volume={45},
number={7},
pages={1922-1926},
document_type={Article},
} 

@ARTICLE{
author={Vasovic Nikola D,Ristic Goran S},
year={2012},
title={A new microcontroller-based RADFET dosimeter reader},
journal={RADIATION MEASUREMENTS},
volume={47},
number={4},
pages={272-276},
document_type={Article},
} 

@ARTICLE{
author={Todorovic Miomir,Vasovic Nikola D,Ristic Goran S},
year={2012},
title={A system for gas electrical breakdown time delay measurements based on a microcontroller},
journal={MEASUREMENT SCIENCE & TECHNOLOGY},
volume={23},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D,Kovacevic Milojko S,Jaksic Aleksandar B},
year={2011},
title={The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
volume={269},
number={23},
pages={2703-2708},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D},
year={2011},
title={Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 degrees C},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={26},
number={8},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Milic M,Denic Dragan B,Pejovic Momcilo M,Nesic Nikola T,Vasovic Nikola D},
year={2010},
title={Microcontroller based system for electrical breakdown time delay measurement in gas-filled devices},
journal={REVIEW OF SCIENTIFIC INSTRUMENTS},
volume={81},
number={10},
pages={-},
document_type={Article},
} 

