@ARTICLE{
author={Spassov Dencho,Paskaleva Albena,Guziewicz Elzbieta,Davidovic Vojkan S,Stankovic Srboljub J,Djoric-Veljkovic Snezana M,Ivanov Tzvetan,Stanchev Todor,Stojadinovic Ninoslav D},
year={2021},
title={Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics},
journal={MATERIALS},
volume={14},
number={4},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Mitrovic Nikola I,Dankovic Danijel M,Randjelovic Branislav M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2020},
title={Modeling of Static Negative Bias Temperature Stressing in p-channel VDMOSFETs using Least Square Method},
journal={INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS},
volume={50},
number={3},
pages={205-214},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Mitrovic Nikola I,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2020},
title={Modeling of NBTS Effects in P-Channel Power VDMOSFETs},
journal={IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY},
volume={20},
number={1},
pages={204-213},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stankovic Srboljub J,Prijic Aneta P,Prijic Zoran D,Manic Ivica Dj,Dankovic Danijel M},
year={2018},
title={NBTI and irradiation related degradation mechanisms in power VDMOS transistors},
journal={MICROELECTRONICS RELIABILITY},
volume={88-90},
number={},
pages={135-141},
document_type={Article; Proceedings Paper},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Prijic Zoran D,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stojadinovic Ninoslav D},
year={2018},
title={A review of pulsed NBTI in P-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={82},
number={},
pages={28-36},
document_type={Review},
} 

@ARTICLE{
author={Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Prijic Aneta P,Stojadinovic Ninoslav D},
year={2018},
title={Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={57},
number={4},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Prijic Aneta P,Marjanovic Milos B,Ilic Aleksandar,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2016},
title={On the Recoverable and Permanent Components of NBTI in p-Channel Power VDMOSFETs},
journal={IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY},
volume={16},
number={4},
pages={522-531},
document_type={Article},
} 

@ARTICLE{
author={Davidovic Vojkan S,Dankovic Danijel M,Ilic Aleksandar,Manic Ivica Dj,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2016},
title={NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={63},
number={2},
pages={1268-1275},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Stojadinovic Ninoslav D,Prijic Zoran D,Manic Ivica Dj,Davidovic Vojkan S,Prijic Aneta P,Djoric-Veljkovic Snezana M,Golubovic Snezana M},
year={2015},
title={Analysis of recoverable and permanent components of threshold voltage shift in NBT stressed p-channel power VDMOSFET},
journal={CHINESE PHYSICS B},
volume={24},
number={10},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Stojadinovic Ninoslav D,Prijic Zoran D,Golubovic Snezana M},
year={2015},
title={Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={30},
number={10},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2015},
title={Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={54},
number={6},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Dankovic Danijel M,Prijic Aneta P,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2014},
title={Measurement of NBTI Degradation in p-channel Power VDMOSFETs},
journal={INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS},
volume={44},
number={4},
pages={280-287},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2013},
title={The Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power Vdmosfet},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={28},
number={4},
pages={406-414},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2013},
title={Effects of static and pulsed negative bias temperature stressing on lifetime in p-channel power VDMOSFETs},
journal={INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS},
volume={43},
number={1},
pages={58-66},
document_type={Article},
} 

@ARTICLE{
author={Atanassova E,Stojadinovic Ninoslav D,Spassov Dencho,Manic Ivica Dj,Paskaleva A},
year={2013},
title={Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={28},
number={5},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Prijic Aneta P,Dankovic Danijel M,Vracar Ljubomir M,Manic Ivica Dj,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2012},
title={A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors},
journal={MEASUREMENT SCIENCE & TECHNOLOGY},
volume={23},
number={8},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Dankovic Danijel M,Prijic Aneta P,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Prijic Zoran D,Stojadinovic Ninoslav D},
year={2011},
title={NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions},
journal={MICROELECTRONICS RELIABILITY},
volume={51},
number={9-11},
pages={1540-1543},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2011},
title={Annealing of Radiation-induced Defects in Burn-in Stressed Power Vdmosfets},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={26},
number={1},
pages={18-24},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Atanassova E,Stojadinovic Ninoslav D,Spassov Dencho,Paskaleva Albena},
year={2011},
title={Hf-doped Ta2O5 stacks under constant voltage stress},
journal={MICROELECTRONIC ENGINEERING},
volume={88},
number={3},
pages={305-313},
document_type={Article},
} 

@ARTICLE{
author={Davidovic Vojkan S,Stojadinovic Ninoslav D,Dankovic Danijel M,Golubovic Snezana M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Dimitrijev Sima},
year={2008},
title={Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors},
journal={JAPANESE JOURNAL OF APPLIED PHYSICS},
volume={47},
number={8},
pages={6272-6276},
document_type={Article},
} 

@ARTICLE{
author={Atanassova E,Stojadinovic Ninoslav D,Paskaleva A,Spassov D,Vracar Ljubomir M,Georgieva M},
year={2008},
title={Constant voltage stress induced current in Ta2O5 stacks and its dependence on a gate electrode},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={23},
number={7},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2008},
title={Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs},
journal={IET CIRCUITS DEVICES & SYSTEMS},
volume={2},
number={2},
pages={213-221},
document_type={Article},
} 

@ARTICLE{
author={Davidovic Vojkan S,Kouvatsos DN,Stojadinovic Ninoslav D,Voutsas AT},
year={2007},
title={Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors},
journal={MICROELECTRONICS RELIABILITY},
volume={47},
number={9-11},
pages={1841-1845},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Davidovic Vojkan S,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2007},
title={Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={47},
number={9-11},
pages={1400-1405},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2006},
title={NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={46},
number={9-11},
pages={1828-1833},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima},
year={2006},
title={Electrical stressing effects in commercial power VDMOSFETs},
journal={IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS},
volume={153},
number={3},
pages={281-288},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Manic Ivica Dj,Golubovic Snezana M},
year={2005},
title={Negative bias temperature instability mechanisms in p-channel power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={45},
number={9-11},
pages={1343-1348},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Davidovic Vojkan S,Dankovic Danijel M,Djoric-Veljkovic Snezana M,Golubovic Snezana M,Dimitrijev Sima},
year={2005},
title={Effects of electrical stressing in power VDMOSFETS},
journal={MICROELECTRONICS RELIABILITY},
volume={45},
number={1},
pages={115-122},
document_type={Article},
} 

@ARTICLE{
author={Kouvatsos DN,Davidovic Vojkan S,Papaioannou GJ,Stojadinovic Ninoslav D,Michalas L,Exarchos M,Voutsas AT,Goustouridis D},
year={2004},
title={Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors},
journal={MICROELECTRONICS RELIABILITY},
volume={44},
number={9-11},
pages={1631-1636},
document_type={Article},
} 

@ARTICLE{
author={Pesic Biljana,Vracar Ljubomir M,Stojadinovic Ninoslav D,Pecovska-Djordjevic M,Novkovski N},
year={2003},
title={Stress-induced leakage currents in thin silicon dioxide films},
journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS},
volume={14},
number={10-12},
pages={805-807},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M,Stojadinovic Ninoslav D},
year={2003},
title={Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={43},
number={9-11},
pages={1455-1460},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M},
year={2002},
title={Effects of burn-in stressing on radiation response of power VDMOSFETs},
journal={MICROELECTRONICS JOURNAL},
volume={33},
number={11},
pages={899-905},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Dankovic Danijel M,Golubovic Snezana M,Dimitrijev Sima},
year={2002},
title={Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={42},
number={9-11},
pages={1465-1468},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Dimitrijev Sima},
year={2002},
title={Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={42},
number={4-5},
pages={669-677},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Djoric-Veljkovic Snezana M,Manic Ivica Dj,Davidovic Vojkan S,Golubovic Snezana M},
year={2002},
title={Radiation hardening of power MOSFETs using electrical stress},
journal={ELECTRONICS LETTERS},
volume={38},
number={9},
pages={431-432},
document_type={Article},
} 

@ARTICLE{
author={Stojadinovic Ninoslav D,Manic Ivica Dj,Djoric-Veljkovic Snezana M,Davidovic Vojkan S,Golubovic Snezana M,Dimitrijev Sima},
year={2001},
title={Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs},
journal={MICROELECTRONICS RELIABILITY},
volume={41},
number={9-10},
pages={1373-1378},
document_type={Article},
} 

@ARTICLE{
author={Manic Ivica Dj,Pavlovic Zoran,Prijic Zoran D,Davidovic Vojkan S,Stojadinovic Ninoslav D},
year={2001},
title={Analytical modelling of electrical characteristics in gamma-irradiated power VDMOS transistors},
journal={MICROELECTRONICS JOURNAL},
volume={32},
number={5-6},
pages={485-490},
document_type={Article},
}