@ARTICLE{
author={Veljkovic Sandra,Mitrovic N,Davidovic Vojkan S,Paskaleva Albena,Spassov Dencho,Marjanovic M,Zivanovic Emilija N,Ristic Goran S,Dankovic Danijel M},
year={2026},
title={Influence of controlling signal parameters and prior stresses on the self-heating of VDMOS power transistors},
journal={MICROELECTRONICS RELIABILITY},
volume={181},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Dankovic Danijel M,Zivanovic Emilija N,Veselinovic Nevena,Djordjevic Dunja,Petrovic Marija,Tasic Lana,Marjanovic Milos B,Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Ristic Goran S},
year={2025},
title={Examination of Impact of NBTIs on Commercial Power P-Channel VDMOS Transistors in Practical Applications},
journal={MICROMACHINES},
volume={17},
number={1},
pages={-},
document_type={Review},
} 

@ARTICLE{
author={Djordjevic Dunja,Tasic Lana,Veselinovic Nevena,Petrovic Marija,Veljkovic Sandra,Mitrovic Nikola I,Marjanovic Milos B,Zivanovic Emilija N,Ristic Goran S,Dankovic Danijel M},
year={2025},
title={Investigation of the Self-Heating Effect in a P-Channel VDMOS Transistor after NBT Stress and Relaxation},
journal={2025 IEEE 34TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, MIEL},
volume={},
number={},
pages={79-82},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Tasic Lana,Davidovic Vojkan S,Ristic Goran S,Prijic Zoran D},
year={2025},
title={Thermal Cycling and Irradiation Stressing of Low Impedance Aluminum Electrolytic Capacitors},
journal={2025 IEEE 34TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, MIEL},
volume={},
number={},
pages={49-53},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Yilmaz Ercan,Ristic Goran S,Turan Rasit,Yilmaz Ozan,Gurer Umutcan,Lugonja Predrag,Budak Erhan,Marjanovic Milos B,Veljkovic Sandra,Mutale Alex,Kahraman Aysegul},
year={2025},
title={Proposal of dual-gate oxide layered with HfO2: Comparative results with SiO2-RadFET},
journal={RADIATION PHYSICS AND CHEMISTRY},
volume={232},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Marjanovic Milos B,Ilic Stefan D,Veljkovic Sandra,Mitrovic Nikola I,Gurer Umutcan,Yilmaz Ozan,Kahraman Aysegul,Aktag Aliekber,Karacali Huseyin,Budak Erhan,Dankovic Danijel M,Ristic Goran S,Yilmaz Ercan},
year={2025},
title={The SPICE Modeling of a Radiation Sensor Based on a MOSFET with a Dielectric HfO<sub>2</sub>/SiO<sub>2</sub> Double-Layer},
journal={SENSORS},
volume={25},
number={2},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Djoric-Veljkovic Snezana M,Zivanovic Emilija N,Davidovic Vojkan S,Veljkovic Sandra,Mitrovic Nikola I,Ristic Goran S,Paskaleva Albena,Spassov Dencho,Dankovic Danijel M},
year={2025},
title={Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors},
journal={MICROMACHINES},
volume={16},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Zivanovic Emilija N,Ristic Goran S,Dankovic Danijel M},
year={2024},
title={Successive Irradiation and Bias Temperature Stress Induced Effects on Commercial P-Channel Power Vdmos Transistors},
journal={FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS},
volume={37},
number={4},
pages={561-579},
document_type={Article},
} 

@ARTICLE{
author={Mitrovic Nikola I,Guirado Damian,Dankovic Danijel M,Palma Alberto J,Ristic Goran S,Carvajal Miguel A},
year={2024},
title={Thermal Annealing-Induced Recovery of the VT of Irradiated Commercial MOS Transistors},
journal={JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS},
volume={},
number={},
pages={-},
document_type={Article; Early Access},
} 

@ARTICLE{
author={Andjelkovic Marko Lj,...,Ilic Stefan D,Marjanovic Milos B,Veljkovic Sandra,Mitrovic Nikola I,Dankovic Danijel M,Ristic Goran S,...,(broj koautora 18)},
year={2023},
title={Towards a Smart Multi-Sensor Ionizing Radiation Monitoring System},
journal={2023 26TH EUROMICRO CONFERENCE ON DIGITAL SYSTEM DESIGN, DSD 2023},
volume={},
number={},
pages={286-293},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Kramberger G,Hiti Bojan,Cindro V,Howard A,Mandic Igor,Mikuz M,Petek M,Ristic Aleksa T,Ristic Goran S},
year={2023},
title={Gain dependence on free carrier concentration in LGADs},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT},
volume={1046},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Pousibet-Garrido A,Escobedo P,Guirado D,Ristic Goran S,Palma AJ,Carvajal MA},
year={2023},
title={Batteryless NFC dosimeter tag for ionizing radiation based on commercial MOSFET},
journal={SENSORS AND ACTUATORS A-PHYSICAL},
volume={354},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko,Marjanovic Milos B,Drasko Bojan,Calligaro Cristiano,Schrape Oliver,Gatti Umberto,Kuentzer Felipe A,Ilic Stefan D,Ristic Goran S,Krstic Milos D},
year={2022},
title={Analysis of Single Event Transient Effects in Standard Delay Cells Based on Decoupling Capacitors},
journal={JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS},
volume={31},
number={18},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko,Marjanovic Milos B,Chen Junchao,Ilic Stefan D,Ristic Goran S,Krstic Milos D},
year={2022},
title={PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients},
journal={MICROELECTRONICS RELIABILITY},
volume={138},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Veljkovic Sandra,Mitrovic Nikola I,Davidovic Vojkan S,Golubovic Snezana M,Djoric-Veljkovic Snezana M,Paskaleva Albena,Spassov Dencho,Stankovic Srboljub J,Andjelkovic Marko Lj,Prijic Zoran D,Manic Ivica Dj,Prijic Aneta P,Ristic Goran S,Dankovic Danijel M},
year={2022},
title={Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress},
journal={JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS},
volume={31},
number={18},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko,Simevski Aleksandar,Chen Junchao,Schrape Oliver,Stamenkovic Zoran,Krstic Milos D,Ilic Stefan D,Ristic Goran S,Jaksic Aleksandar B,Vasovic Nikola,Duane Russell,Palma Alberto J,Lallena Antonio M,Carvajal Miguel Angel},
year={2022},
title={A Design Concept for Radiation Hardened RADFET Readout System for Space Applications},
journal={MICROPROCESSORS AND MICROSYSTEMS},
volume={90},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Lalena Antonio M,Krstic Milos D,Jaksic Aleksandar B},
year={2022},
title={Sensitivity and fading of irradiated RADFETs with different gate voltages},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT},
volume={1029},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Veljkovic Sandra,Jevtic Aleksandar S,Dimitrijevic Strahinja D,Palma Alberto J,Stankovic Srboljub J,Andjelkovic Marko S},
year={2022},
title={Commercial P-Channel Power VDMOSFET as X-ray Dosimeter},
journal={ELECTRONICS},
volume={11},
number={6},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Duane Russell,Jaksic Aleksandar B},
year={2022},
title={Fading of pMOS dosimeters over a long period of time},
journal={MICRO & NANO LETTERS},
volume={17},
number={7},
pages={155-158},
document_type={Letter},
} 

@ARTICLE{
author={Ilic Stefan D,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Sarajlic Milija J,Stankovic Srboljub J,Ristic Goran S},
year={2021},
title={Recharging process of commercial floating-gate MOS transistor in dosimetry application},
journal={MICROELECTRONICS RELIABILITY},
volume={126},
number={},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Ilic Stefan D,Duane Russell,Andjelkovic Marko S,Palma Alberto J,Lallena Antonio M,Krstic Milos D,Stankovic Srboljub J,Jaksic Aleksandar B},
year={2021},
title={Radiation sensitive MOSFETs irradiated with various positive gate biases},
journal={JOURNAL OF RADIATION RESEARCH AND APPLIED SCIENCES},
volume={14},
number={1},
pages={353-357},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Duane Russell,Palma Alberto J,Jaksic Aleksandar B},
year={2021},
title={Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm},
journal={SENSORS AND MATERIALS},
volume={33},
number={6},
pages={2109-2116},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Simevski Aleksandar,Chen Junchao,Schrape Oliver,Stamenkovic Zoran,Krstic Milos D,Ilic Stefan D,Spahic Luka,Kostic Laza,Ristic Goran S,Jaksic Aleksandar B,Palma Alberto J,Lallena Antonio M,Carvajal Miguel Angel},
year={2020},
title={Design of Radiation Hardened RADFET Readout System for Space Applications},
journal={2020 23RD EUROMICRO CONFERENCE ON DIGITAL SYSTEM DESIGN (DSD 2020)},
volume={},
number={},
pages={484-488},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Ilic Stefan D,Jevtic Aleksandar S,Stankovic Srboljub J,Ristic Goran S},
year={2020},
title={Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor},
journal={SENSORS},
volume={20},
number={11},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Maluckov Cedomir A,Radovic Miodrag K,Ristic Goran S},
year={2017},
title={Experimental investigations of commercial gas discharge tube "Osram St 111" using time lag measuring method},
journal={ELECTRICAL ENGINEERING},
volume={99},
number={1},
pages={63-72},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ilic Aleksandar,Petrovic Vladimir,Nenadovic Miljana,Stamenkovic Zoran,Ristic Goran S},
year={2016},
title={SET Response of a SEL Protection Switch for 130 and 250 nm CMOS Technologies},
journal={2016 IEEE 22ND INTERNATIONAL SYMPOSIUM ON ON-LINE TESTING AND ROBUST SYSTEM DESIGN (IOLTS)},
volume={},
number={},
pages={185-190},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Savovic Svetislav M},
year={2016},
title={The isochronal annealing of irradiated n-channel power VDMOSFETs},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
volume={366},
number={},
pages={171-178},
document_type={Article},
} 

@ARTICLE{
author={Sokolovic Dusan T,Djordjevic Branka S,Kocic Gordana M,Jevtovic-Stoimenov Tatjana M,Stanojkovic Zoran A,Sokolovic Danka M,Veljkovic Andrej R,Ristic Goran S,Despotovic Milena R,Milisavljevic Dusan R,Jankovic Radmilo J,Binic Ivana I},
year={2015},
title={The Effects of Melatonin on Oxidative Stress Parameters and DNA Fragmentation in Testicular Tissue of Rats Exposed to Microwave Radiation},
journal={ADVANCES IN CLINICAL AND EXPERIMENTAL MEDICINE},
volume={24},
number={3},
pages={429-436},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Petrovic Vladimir,Stamenkovic Zoran,Ristic Goran S,Jovanovic Goran S},
year={2015},
title={Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch},
journal={JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS},
volume={31},
number={3},
pages={275-289},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Andjelkovic Marko S,Jaksic Aleksandar B},
year={2015},
title={The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses},
journal={APPLIED RADIATION AND ISOTOPES},
volume={102},
number={},
pages={29-34},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ristic Goran S},
year={2015},
title={Current mode response of phototransistors to gamma radiation},
journal={RADIATION MEASUREMENTS},
volume={75},
number={},
pages={29-38},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ristic Goran S,Jaksic Aleksandar B},
year={2015},
title={Using RADFET for the real-time measurement of gamma radiation dose rate},
journal={MEASUREMENT SCIENCE & TECHNOLOGY},
volume={26},
number={2},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Stamenkovic Zoran,Vasovic Nikola D,Ristic Goran S},
year={2014},
title={Automatic and Reliable Electrical Characterization of MOSFETs},
journal={PROCEEDINGS OF THE 2014 IEEE 17TH INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS)},
volume={},
number={},
pages={262-265},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Maluckov Cedomir A,Radovic Miodrag K,Rancev Sasa A,Ristic Goran S,Karamarkovic Jugoslav P},
year={2013},
title={The Electrical Breakdown Time Delay Distributions in "Ge 155/500" Gas Diode (Starter)},
journal={ROMANIAN REPORTS IN PHYSICS},
volume={65},
number={4},
pages={1373-1383},
document_type={Article},
} 

@ARTICLE{
author={Andjelkovic Marko S,Ristic Goran S},
year={2013},
title={Feasibility Study of a Current Mode Gamma Radiation Dosimeter Based on a Commercial Pin Photodiode and a Custom Made Auto-Ranging Electrometer},
journal={NUCLEAR TECHNOLOGY & RADIATION PROTECTION},
volume={28},
number={1},
pages={73-83},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D,Jaksic Aleksandar B},
year={2012},
title={The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={45},
number={30},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Vasovic Nikola D,Ristic Goran S},
year={2012},
title={A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs},
journal={MEASUREMENT},
volume={45},
number={7},
pages={1922-1926},
document_type={Article},
} 

@ARTICLE{
author={Savovic Svetislav M,Djordjevich Alexandar,Ristic Goran S},
year={2012},
title={Numerical solution of the transport equation describing the radon transport from subsurface soil to buildings},
journal={RADIATION PROTECTION DOSIMETRY},
volume={150},
number={2},
pages={213-216},
document_type={Article},
} 

@ARTICLE{
author={Sokolovic Dusan T,Djordjevic Branka S,Kocic Gordana M,Babovic Petar,Ristic Goran S,Stanojkovic Zoran A,Sokolovic Dusan T,Veljkovic Andrej R,Jankovic Aleksandar S,Radovanovic Zoran L},
year={2012},
title={The effect of melatonin on body mass and behaviour of rats during an exposure to microwave radiation from mobile phone},
journal={BRATISLAVA MEDICAL JOURNAL-BRATISLAVSKE LEKARSKE LISTY},
volume={113},
number={5},
pages={265-269},
document_type={Article},
} 

@ARTICLE{
author={Vasovic Nikola D,Ristic Goran S},
year={2012},
title={A new microcontroller-based RADFET dosimeter reader},
journal={RADIATION MEASUREMENTS},
volume={47},
number={4},
pages={272-276},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S},
year={2012},
title={Defect Behaviors During High Electric Field Stress of p-Channel Power MOSFETs},
journal={IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY},
volume={12},
number={1},
pages={94-100},
document_type={Article},
} 

@ARTICLE{
author={Todorovic Miomir,Vasovic Nikola D,Ristic Goran S},
year={2012},
title={A system for gas electrical breakdown time delay measurements based on a microcontroller},
journal={MEASUREMENT SCIENCE & TECHNOLOGY},
volume={23},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D,Kovacevic Milojko S,Jaksic Aleksandar B},
year={2011},
title={The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)},
journal={NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS},
volume={269},
number={23},
pages={2703-2708},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Vasovic Nikola D},
year={2011},
title={Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 degrees C},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={26},
number={8},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Jelenkovic Emil V,Ristic Goran S,Pejovic Milic M,Jevtic Milan M,Jha Shrawan K,Videnovic-Misic Mirjana S,Pejovic Momcilo M,Tong KY},
year={2011},
title={Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={44},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S},
year={2009},
title={Thermal and UV annealing of irradiated pMOS dosimetric transistors},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={42},
number={13},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Jha Shrawan K,Jelenkovic Emil V,Pejovic Milic M,Ristic Goran S,Pejovic Momcilo M,Tong KY,Surya C,Bello I,Zhang WJ},
year={2009},
title={Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays},
journal={MICROELECTRONIC ENGINEERING},
volume={86},
number={1},
pages={37-40},
document_type={Article},
} 

@ARTICLE{
author={Nesic Nikola T,Ristic Goran S,Karamarkovic Jugoslav P,Pejovic Momcilo M},
year={2008},
title={Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={41},
number={22},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S},
year={2008},
title={Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={41},
number={2},
pages={-},
document_type={Review},
} 

@ARTICLE{
author={Pejovic Momcilo M,Karamarkovic Jugoslav P,Ristic Goran S,Pejovic Milic M},
year={2008},
title={Analysis of neutral active particle loss in afterglow in krypton at 2.6 mbar pressure},
journal={PHYSICS OF PLASMAS},
volume={15},
number={1},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2007},
title={Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress},
journal={JOURNAL OF NON-CRYSTALLINE SOLIDS},
volume={353},
number={2},
pages={170-179},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2006},
title={Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing},
journal={APPLIED SURFACE SCIENCE},
volume={252},
number={8},
pages={3023-3032},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2005},
title={Fowler-Nordheim high electric field stress of power VDMOSFETs},
journal={SOLID-STATE ELECTRONICS},
volume={49},
number={7},
pages={1140-1152},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Milic M,Pejovic Momcilo M,Ristic Goran S},
year={2005},
title={Gamma and UV radiation effects on breakdown voltage of neon-filled tube},
journal={IEEE TRANSACTIONS ON PLASMA SCIENCE},
volume={33},
number={3},
pages={1047-1052},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2003},
title={Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs},
journal={APPLIED SURFACE SCIENCE},
volume={220},
number={1-4},
pages={181-185},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Momcilo M,Ristic Goran S},
year={2002},
title={Memory effects in argon, nitrogen, and hydrogen},
journal={IEEE TRANSACTIONS ON PLASMA SCIENCE},
volume={30},
number={3},
pages={1315-1319},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Momcilo M,Ristic Goran S,Milosavljevic Cedomir S,Pejovic Milic M},
year={2002},
title={Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={35},
number={20},
pages={2536-2542},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Ristic Goran S,Pejovic Momcilo M,Mohammadzadeh A,Sudre C,Lane W},
year={2002},
title={Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={49},
number={3},
pages={1356-1363},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Momcilo M,Ristic Goran S,Karamarkovic Jugoslav P},
year={2002},
title={Electrical breakdown in low pressure gases},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={35},
number={10},
pages={R91-R103},
document_type={Review},
} 

@ARTICLE{
author={Pejovic Momcilo M,Ristic Goran S},
year={2002},
title={Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method},
journal={PHYSICS OF PLASMAS},
volume={9},
number={1},
pages={364-370},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Pejovic Momcilo M,Ristic Goran S},
year={2000},
title={Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments},
journal={APPLIED PHYSICS LETTERS},
volume={77},
number={25},
pages={4220-4222},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Momcilo M,Ristic Goran S},
year={2000},
title={Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method},
journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS},
volume={33},
number={21},
pages={2786-2790},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Pejovic Momcilo M,Ristic Goran S},
year={2000},
title={Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={47},
number={3},
pages={659-666},
document_type={Article},
} 

@ARTICLE{
author={Jaksic Aleksandar B,Ristic Goran S,Pejovic Momcilo M},
year={2000},
title={New experimental evidence of latent interface-trap buildup in power VDMOSFETs},
journal={IEEE TRANSACTIONS ON NUCLEAR SCIENCE},
volume={47},
number={3},
pages={580-586},
document_type={Article},
} 

@ARTICLE{
author={Pejovic Momcilo M,Ristic Goran S},
year={2000},
title={Nitrogen-filled tube as a sensor of ionizing radiation},
journal={REVIEW OF SCIENTIFIC INSTRUMENTS},
volume={71},
number={6},
pages={2377-2379},
document_type={Article},
} 

@ARTICLE{
author={Ristic Goran S,Pejovic Momcilo M,Jaksic Aleksandar B},
year={2000},
title={Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors},
journal={JOURNAL OF APPLIED PHYSICS},
volume={87},
number={7},
pages={3468-3477},
document_type={Article},
} 

