@ARTICLE{
author={Sasic Rajko M,Lukic Petar M,Ostojic Stanko M,Ramovic Rifat M},
year={2008},
title={Surface carriers' concentration dynamics caused by a small alternating applied voltage},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={10},
number={12},
pages={3430-3435},
document_type={Article},
} 

@ARTICLE{
author={Sarajlic Milija J,Ramovic Rifat M},
year={2008},
title={On the relationship between effective electron mobility and kink effect for short-channel PD SOINMOS devices},
journal={INTERNATIONAL JOURNAL OF MODERN PHYSICS B},
volume={22},
number={16},
pages={2599-2610},
document_type={Article},
} 

@ARTICLE{
author={Milosevic Milan M,Ramovic Rifat M},
year={2007},
title={Analytical model of carrier mobility in a polymer field effect transistor},
journal={HEMIJSKA INDUSTRIJA},
volume={61},
number={2},
pages={55-59},
document_type={Article},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M,Ramovic Rifat M,Ostojic Stanko M},
year={2007},
title={Threshold voltage in MOSFETs and MODFETs as a problem of nonlinear dynamics},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={9},
number={9},
pages={2703-2708},
document_type={Article},
} 

@ARTICLE{
author={Aleksic Obrad S,Radojcic Branka M,Ramovic Rifat M},
year={2007},
title={Modeling and simulation of NTC thick film thermistor geometries},
journal={MICROELECTRONICS INTERNATIONAL},
volume={24},
number={1},
pages={27-34},
document_type={Article},
} 

@ARTICLE{
author={Ramovic Rifat M,Sasic Rajko M,Lukic Petar M},
year={2006},
title={Novel approach to the investigation of carriers' concentration in various semiconductor structures},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={8},
number={4},
pages={1418-1423},
document_type={Article},
} 

@ARTICLE{
author={Arsoski Vladimir V,Ramovic Rifat M,Sreckovic Milesa Z},
year={2006},
title={Optical properties of simple bilayer polymer light emitting diode},
journal={RECENT DEVELOPMENTS IN ADVANCED MATERIALS AND PROCESSES},
volume={518},
number={},
pages={387-392},
document_type={Article},
} 

@ARTICLE{
author={Sasic Rajko M,Lukic Petar M,Ramovic Rifat M},
year={2006},
title={New analytical HFET I-V characteristics model},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={8},
number={1},
pages={324-328},
document_type={Article},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2005},
title={HEMT carrier mobility analytical model},
journal={CURRENT RESEARCH IN ADVANCED MATERIALS AND PROCESSES},
volume={494},
number={},
pages={43-48},
document_type={Article},
} 

@ARTICLE{
author={Lukic Petar M,Ramovic Rifat M,Sasic Rajko M},
year={2005},
title={Analytical model of electric field in heterojunction region of HFET structure},
journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS},
volume={7},
number={3},
pages={1611-1617},
document_type={Article},
} 

@ARTICLE{
author={Ramovic Rifat M,Lukic Petar M},
year={2004},
title={Surface density analytical model of two-dimensional electron gas in HEMT structures},
journal={PROGRESS IN ADVANCED MATERIALS AND PROCESSES},
volume={453-454},
number={},
pages={27-32},
document_type={Article},
} 

@ARTICLE{
author={Sasic Rajko M,Cevizovic Dalibor N,Ramovic Rifat M},
year={2003},
title={Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel},
journal={CONTEMPORARY STUDIES IN ADVANCED MATERIALS AND PROCESSES},
volume={413},
number={},
pages={39-44},
document_type={Article},
} 

@ARTICLE{
author={Jevtic Milan M,Hadzi-Vukovic Jovan M,Ramovic Rifat M},
year={2002},
title={An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator},
journal={MICROELECTRONICS JOURNAL},
volume={33},
number={11},
pages={955-960},
document_type={Article},
} 

