@ARTICLE{
author={Damnjanovic Vesna M,Ponomarenko VP,Elazar Jovan M},
year={2009},
title={Photo-electric characteristics of HgCdTe tunnel MIS photo-detectors},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={24},
number={2},
pages={-},
document_type={Article},
} 

@ARTICLE{
author={Damnjanovic Vesna M,Ponomarenko VP,Elazar Jovan M},
year={2007},
title={Electrical characteristics of HgCdTe Schottky diode photo-detectors with passivation layers transparent to free carriers},
journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
volume={22},
number={2},
pages={137-144},
document_type={Article},
} 

@ARTICLE{
author={Damnjanovic Vesna M,Ponomarenko VP},
year={2003},
title={The properties of Schottky-barrier photodiodes based on CdxHg1-xTe with tunnel transparent dielectric},
journal={17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES},
volume={5126},
number={},
pages={200-205},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Damnjanovic Vesna M,Ponomarenko VP},
year={2003},
title={Properties of Schottky barrier p-CdxHg1-xTe structures with metal-tunnel transparent dielectric},
journal={17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES},
volume={5126},
number={},
pages={191-199},
document_type={Proceedings Paper},
}