@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Pantic Dragan S},
year={2007},
title={Dynamic MAGFET model for sensor simulations},
journal={IET CIRCUITS DEVICES & SYSTEMS},
volume={1},
number={4},
pages={270-274},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Igic Petar},
year={2007},
title={All injection level power PiN diode model including temperature dependence},
journal={SOLID-STATE ELECTRONICS},
volume={51},
number={5},
pages={719-725},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,O'Neill AG},
year={2006},
title={Modelling of strained-Si/SiGe NMOS transistors including DC self-heating},
journal={SOLID-STATE ELECTRONICS},
volume={50},
number={3},
pages={496-499},
document_type={Article},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D},
year={2005},
title={A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line},
journal={IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS},
volume={24},
number={10},
pages={1550-1561},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V},
year={2005},
title={Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET},
journal={SOLID-STATE ELECTRONICS},
volume={49},
number={7},
pages={1086-1089},
document_type={Article},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D},
year={2001},
title={An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors},
journal={MICROELECTRONICS JOURNAL},
volume={32},
number={9},
pages={713-718},
document_type={Article},
}