@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Pantic Dragan S},
year={2007},
title={Dynamic MAGFET model for sensor simulations},
journal={IET CIRCUITS DEVICES & SYSTEMS},
volume={1},
number={4},
pages={270-274},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Igic Petar},
year={2007},
title={All injection level power PiN diode model including temperature dependence},
journal={SOLID-STATE ELECTRONICS},
volume={51},
number={5},
pages={719-725},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,O'Neill AG},
year={2006},
title={Modelling of strained-Si/SiGe NMOS transistors including DC self-heating},
journal={SOLID-STATE ELECTRONICS},
volume={50},
number={3},
pages={496-499},
document_type={Article},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D},
year={2005},
title={A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line},
journal={IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS},
volume={24},
number={10},
pages={1550-1561},
document_type={Article},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V},
year={2005},
title={Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET},
journal={SOLID-STATE ELECTRONICS},
volume={49},
number={7},
pages={1086-1089},
document_type={Article},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D},
year={2004},
title={Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis},
journal={2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND  2},
volume={},
number={},
pages={261-264},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Jovanovic Elva,Pesic Tatjana V,Pantic Dragan S},
year={2004},
title={3D simulation of cross-shaped hall sensor and its equivalent circuit model},
journal={2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND  2},
volume={},
number={},
pages={235-238},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D,Huebers Heinz-Wilhelm},
year={2002},
title={Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation},
journal={ASDAM '02, CONFERENCE PROCEEDINGS},
volume={},
number={},
pages={187-190},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Jankovic Nebojsa D,Pesic Tatjana V,Huebers Heinz-Wilhelm},
year={2002},
title={1D physically based non-quasi-static analog behavioral BJT model for SPICE},
journal={2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS},
volume={},
number={},
pages={463-468},
document_type={Proceedings Paper},
} 

@ARTICLE{
author={Pesic Tatjana V,Jankovic Nebojsa D},
year={2001},
title={An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors},
journal={MICROELECTRONICS JOURNAL},
volume={32},
number={9},
pages={713-718},
document_type={Article},
} 

@ARTICLE{
author={Karamarkovic Jugoslav P,Pesic Tatjana V,Jankovic Nebojsa D},
year={2000},
title={An analytical approach to Kirk effect modelling},
journal={2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS},
volume={},
number={},
pages={311-314},
document_type={Proceedings Paper},
}